component
DMG6968UTS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMG6968UTS-13
Diodes Incorporated · MOSFETs · TSSOP-8
DMG6968UTS-13 from Diodes Incorporated, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal shared by both N-channel MOSFETs (internal schematic shows a common D), VDSS 20V max. |
| 2 | S1 | passive | Source of N-channel MOSFET 1, ID 5.2A continuous at TA=25°C. |
| 3 | S1 | passive | Source of N-channel MOSFET 1, ID 5.2A continuous at TA=25°C. |
| 4 | G1 | input | Gate of N-channel MOSFET 1, VGSS ±12V max with ESD protection up to 2kV. |
| 5 | G2 | input | Gate of N-channel MOSFET 2, VGSS ±12V max with ESD protection up to 2kV. |
| 6 | S2 | passive | Source of N-channel MOSFET 2, ID 5.2A continuous at TA=25°C. |
| 7 | S2 | passive | Source of N-channel MOSFET 2, ID 5.2A continuous at TA=25°C. |
| 8 | D | passive | Drain terminal shared by both N-channel MOSFETs (internal schematic shows a common D), VDSS 20V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSSOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 10 | μA | VGS = ±10V, VDS = 0V | 2 | ||
| Gate-Source Breakdown Voltage | BVSGS | -12 | 12 | V | VDS = 0V, IG = ±250μA | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.35 | 0.95 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 23 | mΩ | VGS = 4.5V, ID = 6.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 27 | mΩ | VGS = 2.5V, ID = 5.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 26 | 34 | mΩ | VGS = 1.8V, ID = 3.5A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1 | V | VGS = 0V, IS = 1A | 2 | |
| Drain-Source Voltage | VDSS | 20 | V | TA = 25°C | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | TA = 25°C | 2 | |
| Continuous Drain Current | ID | 5.2 | A | Steady State, TA = 25°C | 2 | ||
| Continuous Drain Current | ID | 3.5 | A | Steady State, TA = 70°C | 2 | ||
| Pulsed Drain Current | IDM | 30 | A | TA = 25°C | 2 | ||
| Power Dissipation | PD | 1 | W | Device mounted on FR-4 PCB | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | °C/W | TA = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Forward Transfer Admittance | /Yfs/ | 13 | S | VDS = 5V, ID = 5A | 2 | ||
| Input Capacitance | Ciss | 143 | pF | VDS =10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 74 | pF | VDS =10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 29 | pF | VDS =10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 202 | Ω | VDS =0V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 8.8 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Gate-Source Charge | Qgs | 1.4 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 | ||
| Turn-On Delay Time | tD(on) | 53 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 | ||
| Turn-On Rise Time | tr | 78 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 562 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 | ||
| Turn-Off Fall Time | tf | 234 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 |
CAD (KiCad official)
- Symbol:
DMG6968UTS-13 - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
dmg6968uts-13-etched.step/dmg6968uts-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg6968uts-13.step/dmg6968uts-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
579c7f1a988b9bdf, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMG6968UTS-13
**Diodes Incorporated** · MOSFETs · TSSOP-8
DMG6968UTS-13 from Diodes Incorporated, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal shared by both N-channel MOSFETs (internal schematic shows a common D), VDSS 20V max. |
| 2 | S1 | passive | Source of N-channel MOSFET 1, ID 5.2A continuous at TA=25°C. |
| 3 | S1 | passive | Source of N-channel MOSFET 1, ID 5.2A continuous at TA=25°C. |
| 4 | G1 | input | Gate of N-channel MOSFET 1, VGSS ±12V max with ESD protection up to 2kV. |
| 5 | G2 | input | Gate of N-channel MOSFET 2, VGSS ±12V max with ESD protection up to 2kV. |
| 6 | S2 | passive | Source of N-channel MOSFET 2, ID 5.2A continuous at TA=25°C. |
| 7 | S2 | passive | Source of N-channel MOSFET 2, ID 5.2A continuous at TA=25°C. |
| 8 | D | passive | Drain terminal shared by both N-channel MOSFETs (internal schematic shows a common D), VDSS 20V max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSSOP-8 |
| Category | Transistors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 20V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | | | 10 | μA | VGS = ±10V, VDS = 0V | 2 |
| Gate-Source Breakdown Voltage | BVSGS | -12 | | 12 | V | VDS = 0V, IG = ±250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.35 | | 0.95 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 18 | 23 | mΩ | VGS = 4.5V, ID = 6.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 21 | 27 | mΩ | VGS = 2.5V, ID = 5.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 26 | 34 | mΩ | VGS = 1.8V, ID = 3.5A | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1 | V | VGS = 0V, IS = 1A | 2 |
| Drain-Source Voltage | VDSS | | | 20 | V | TA = 25°C | 2 |
| Gate-Source Voltage | VGSS | -12 | | 12 | V | TA = 25°C | 2 |
| Continuous Drain Current | ID | | | 5.2 | A | Steady State, TA = 25°C | 2 |
| Continuous Drain Current | ID | | | 3.5 | A | Steady State, TA = 70°C | 2 |
| Pulsed Drain Current | IDM | | | 30 | A | TA = 25°C | 2 |
| Power Dissipation | PD | | | 1 | W | Device mounted on FR-4 PCB | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 125 | | °C/W | TA = 25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Forward Transfer Admittance | /Yfs/ | | 13 | | S | VDS = 5V, ID = 5A | 2 |
| Input Capacitance | Ciss | | 143 | | pF | VDS =10V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 74 | | pF | VDS =10V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 29 | | pF | VDS =10V, VGS = 0V, f = 1.0MHz | 2 |
| Gate Resistance | Rg | | 202 | | Ω | VDS =0V, VGS = 0V, f = 1MHz | 2 |
| Total Gate Charge | Qg | | 8.8 | | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 |
| Gate-Source Charge | Qgs | | 1.4 | | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A | 2 |
| Turn-On Delay Time | tD(on) | | 53 | | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 |
| Turn-On Rise Time | tr | | 78 | | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 |
| Turn-Off Delay Time | tD(off) | | 562 | | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 |
| Turn-Off Fall Time | tf | | 234 | | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω | 2 |
## CAD (KiCad official)
- Symbol: `DMG6968UTS-13`
- Footprint: `Package_SO:TSSOP-8_3x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `dmg6968uts-13-etched.step` / `dmg6968uts-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg6968uts-13.step` / `dmg6968uts-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMG6968UTS-13.pdf) (6 pp, sha256 `579c7f1a988b9bdf`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmg6968uts-13-datasheet.pdf)