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DMG6968UTS-13

Diodes Incorporated · MOSFETs · TSSOP-8

DMG6968UTS-13 from Diodes Incorporated, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal shared by both N-channel MOSFETs (internal schematic shows a common D), VDSS 20V max.
2 S1 passive Source of N-channel MOSFET 1, ID 5.2A continuous at TA=25°C.
3 S1 passive Source of N-channel MOSFET 1, ID 5.2A continuous at TA=25°C.
4 G1 input Gate of N-channel MOSFET 1, VGSS ±12V max with ESD protection up to 2kV.
5 G2 input Gate of N-channel MOSFET 2, VGSS ±12V max with ESD protection up to 2kV.
6 S2 passive Source of N-channel MOSFET 2, ID 5.2A continuous at TA=25°C.
7 S2 passive Source of N-channel MOSFET 2, ID 5.2A continuous at TA=25°C.
8 D passive Drain terminal shared by both N-channel MOSFETs (internal schematic shows a common D), VDSS 20V max.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSSOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 20V, VGS = 0V 2
Gate-Source Leakage IGSS 10 μA VGS = ±10V, VDS = 0V 2
Gate-Source Breakdown Voltage BVSGS -12 12 V VDS = 0V, IG = ±250μA 2
Gate Threshold Voltage VGS(th) 0.35 0.95 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 18 23 mΩ VGS = 4.5V, ID = 6.5A 2
Static Drain-Source On-Resistance RDS(ON) 21 27 mΩ VGS = 2.5V, ID = 5.5A 2
Static Drain-Source On-Resistance RDS(ON) 26 34 mΩ VGS = 1.8V, ID = 3.5A 2
Diode Forward Voltage VSD 0.7 1 V VGS = 0V, IS = 1A 2
Drain-Source Voltage VDSS 20 V TA = 25°C 2
Gate-Source Voltage VGSS -12 12 V TA = 25°C 2
Continuous Drain Current ID 5.2 A Steady State, TA = 25°C 2
Continuous Drain Current ID 3.5 A Steady State, TA = 70°C 2
Pulsed Drain Current IDM 30 A TA = 25°C 2
Power Dissipation PD 1 W Device mounted on FR-4 PCB 2
Thermal Resistance, Junction to Ambient RθJA 125 °C/W TA = 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Forward Transfer Admittance /Yfs/ 13 S VDS = 5V, ID = 5A 2
Input Capacitance Ciss 143 pF VDS =10V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 74 pF VDS =10V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 29 pF VDS =10V, VGS = 0V, f = 1.0MHz 2
Gate Resistance Rg 202 Ω VDS =0V, VGS = 0V, f = 1MHz 2
Total Gate Charge Qg 8.8 nC VGS = 4.5V, VDS = 10V, ID = 6.5A 2
Gate-Source Charge Qgs 1.4 nC VGS = 4.5V, VDS = 10V, ID = 6.5A 2
Gate-Drain Charge Qgd 3 nC VGS = 4.5V, VDS = 10V, ID = 6.5A 2
Turn-On Delay Time tD(on) 53 ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 2
Turn-On Rise Time tr 78 ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 2
Turn-Off Delay Time tD(off) 562 ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 2
Turn-Off Fall Time tf 234 ns VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 2

CAD (KiCad official)

  • Symbol: DMG6968UTS-13
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmg6968uts-13-etched.step / dmg6968uts-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg6968uts-13.step / dmg6968uts-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 579c7f1a988b9bdf, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF