DMG6602SVT-7

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  "description": "Diodes Incorporated MOSFETs, TSOT-26. Datasheet-verified pinout, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "DMG6602SVT-7",
    "manufacturer": "Diodes Incorporated",
    "package": "TSOT-26",
    "pin_count": 6,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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    "pins": [
      {
        "number": "1",
        "name": "D1",
        "type": "passive",
        "description": "Drain of Q1 N-channel MOSFET; VDSS = 30V, RDS(on) = 60mΩ (typ.) / 100mΩ (max) at VGS = 10V / 4.5V; continuous drain current ID = 3.4A at TA = +25°C."
      },
      {
        "number": "2",
        "name": "S1",
        "type": "passive",
        "description": "Source of Q1 N-channel MOSFET; body diode forward voltage VSD = 0.8V (typ.) / 1.0V (max) at IS = 1A; maximum continuous body diode forward current IS = 1.5A."
      },
      {
        "number": "3",
        "name": "D2",
        "type": "passive",
        "description": "Drain of Q2 P-channel MOSFET; VDSS = -30V, RDS(on) = 95mΩ (typ.) / 140mΩ (max) at VGS = -10V / -4.5V; continuous drain current ID = -2.8A at TA = +25°C."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of Q2 P-channel MOSFET; gate threshold voltage VGS(th) = -1.0V to -2.3V at ID = -250μA; maximum gate-source voltage VGSS = ±20V."
      },
      {
        "number": "5",
        "name": "S2",
        "type": "passive",
        "description": "Source of Q2 P-channel MOSFET; body diode forward voltage VSD = -0.8V (typ.) / -1.0V (max) at IS = -1A; maximum continuous body diode forward current IS = -1.5A."
      },
      {
        "number": "6",
        "name": "G1",
        "type": "input",
        "description": "Gate of Q1 N-channel MOSFET; gate threshold voltage VGS(th) = 1.0V to 2.3V at ID = 250μA; maximum gate-source voltage VGSS = ±20V."
      }
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