main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 13d ago
viewers dmg2305ux-13-vb: viewers · Ray 13d ago
dmg2305ux-13-vb-etched.glb Publish 0.1.0 · Ray 13d ago
dmg2305ux-13-vb-etched.step dmg2305ux-13-vb: factory component page (tier=lcsc) · Ray 13d ago
dmg2305ux-13-vb-hero.glb dmg2305ux-13-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 13d ago
dmg2305ux-13-vb-hero.overlay.json Publish 0.1.0 · Ray 13d ago
dmg2305ux-13-vb.glb Publish 0.1.0 · Ray 13d ago
dmg2305ux-13-vb.kicad_mod Publish 0.1.0 · Ray 13d ago
dmg2305ux-13-vb.kicad_sym Publish 0.1.0 · Ray 13d ago
dmg2305ux-13-vb.lbr Publish 0.1.0 · Ray 13d ago
dmg2305ux-13-vb.step Publish 0.1.0 · Ray 13d ago
package.json Publish 0.1.0 · Ray 13d ago
page.json Set visibility: public · Ray 13d ago
README.md Publish 0.1.0 · Ray 13d ago

DMG2305UX-13-VB

VBsemi Elec · MOSFETs · SOT-23

DMG2305UX-13-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate-source voltage is rated at ±8 V (VGS), and the gate-source leakage is specified at ±100 nA maximum at VGS = ±8 V.
2 S passive Continuous source current (diode conduction) is rated at -2.5 A (IS), with a pulsed source current of -20 A (ISM).
3 D passive Drain-source voltage is rated at -20 V (VDS) with continuous drain current of -5 A at TC = 25 °C (ID), and the part is specified for operating junction and storage temperature from -55 °C to +175 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -5 A TC = 25 °C 1
Continuous Drain Current ID -3 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS -2.5 A 1
Pulsed Drain Current IDM -20 A 1
Single Pulse Avalanche Current IAS -11 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 6 mJ 1
Maximum Power Dissipation PD 2 W TC = 25 °C 1
Maximum Power Dissipation PD 0.67 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient PCB Mount RthJA 175 °C/W PCB Mount 1
Junction-to-Foot (Drain) RthJF 75 °C/W 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 μA 2
Gate-Source Threshold Voltage VGS(th) -0.45 -1 V VDS = VGS, ID = - 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = - 12 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = - 12 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = - 12 V, TJ = 175 °C 2
Input Capacitance Ciss 695 870 pF VGS = 0 V, VDS = - 6 V, f = 1 MHz 2
Output Capacitance Coss 265 335 pF VGS = 0 V, VDS = - 6 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 190 240 pF VGS = 0 V, VDS = - 6 V, f = 1 MHz 2
Total Gate Charge Qg 8.4 13 nC VGS = - 4.5 V, VDS = - 6 V, ID = - 3.85 A 2
Gate Resistance Rg 4.1 8.2 12.3 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 7 26 ns VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 2
Rise Time tr 19 29 ns VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 28 42 ns VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 2
Fall Time tf 13 20 ns VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 2
Pulsed Current ISM -20 A 2
Forward Voltage VSD 0.8 1.2 V IF = - 2 A, VGS = 0 V 2
Drain-Source On-State Resistance RDS(on) 0.034 Ω VGS = - 4.5 V, ID = - 3.5 A 2
Drain-Source On-State Resistance RDS(on) 0.066 Ω VGS = - 4.5 V, ID = - 3.5 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.075 Ω VGS = - 4.5 V, ID = - 3.5 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.046 Ω VGS = - 2.5 V, ID = - 3 A 2
Drain-Source On-State Resistance RDS(on) 0.067 Ω VGS = - 1.8 V, ID = - 2 A 2
Forward Transconductance gfs 7 S VDS = - 5 V, ID = - 1.6 A 2
Gate-Drain Charge Qgd 2.4 nC VGS = - 4.5 V, VDS = - 6 V, ID = - 3.85 A 2
On-State Drain Current ID(on) -10 A VGS = - 4.5 V, VDS = - 5 V 2

CAD (KiCad official)

  • Symbol: DMG2305UX-13-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmg2305ux-13-vb-etched.step / dmg2305ux-13-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg2305ux-13-vb.step / dmg2305ux-13-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 808090eeb13dc457, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF