component
DMG2305UX-13-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMG2305UX-13-VB
VBsemi Elec · MOSFETs · SOT-23
DMG2305UX-13-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is rated at ±8 V (VGS), and the gate-source leakage is specified at ±100 nA maximum at VGS = ±8 V. |
| 2 | S | passive | Continuous source current (diode conduction) is rated at -2.5 A (IS), with a pulsed source current of -20 A (ISM). |
| 3 | D | passive | Drain-source voltage is rated at -20 V (VDS) with continuous drain current of -5 A at TC = 25 °C (ID), and the part is specified for operating junction and storage temperature from -55 °C to +175 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -5 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -3 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -2.5 | A | 1 | |||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | -11 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 6 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.67 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient PCB Mount | RthJA | 175 | °C/W | PCB Mount | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 75 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -20 | V | VGS = 0 V, ID = - 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | -1 | V | VDS = VGS, ID = - 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = - 12 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = - 12 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = - 12 V, TJ = 175 °C | 2 | ||
| Input Capacitance | Ciss | 695 | 870 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 265 | 335 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 190 | 240 | pF | VGS = 0 V, VDS = - 6 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 8.4 | 13 | nC | VGS = - 4.5 V, VDS = - 6 V, ID = - 3.85 A | 2 | |
| Gate Resistance | Rg | 4.1 | 8.2 | 12.3 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 7 | 26 | ns | VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Rise Time | tr | 19 | 29 | ns | VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 28 | 42 | ns | VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Fall Time | tf | 13 | 20 | ns | VDD = - 6 V, RL = 1.6, ID = - 3.85 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Pulsed Current | ISM | -20 | A | 2 | |||
| Forward Voltage | VSD | 0.8 | 1.2 | V | IF = - 2 A, VGS = 0 V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.034 | Ω | VGS = - 4.5 V, ID = - 3.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.066 | Ω | VGS = - 4.5 V, ID = - 3.5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.075 | Ω | VGS = - 4.5 V, ID = - 3.5 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.046 | Ω | VGS = - 2.5 V, ID = - 3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.067 | Ω | VGS = - 1.8 V, ID = - 2 A | 2 | ||
| Forward Transconductance | gfs | 7 | S | VDS = - 5 V, ID = - 1.6 A | 2 | ||
| Gate-Drain Charge | Qgd | 2.4 | nC | VGS = - 4.5 V, VDS = - 6 V, ID = - 3.85 A | 2 | ||
| On-State Drain Current | ID(on) | -10 | A | VGS = - 4.5 V, VDS = - 5 V | 2 |
CAD (KiCad official)
- Symbol:
DMG2305UX-13-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmg2305ux-13-vb-etched.step/dmg2305ux-13-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg2305ux-13-vb.step/dmg2305ux-13-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
808090eeb13dc457, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).