component
DMG2301L-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
dmg2301l-13: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
41a8fad
17d ago
DMG2301L-13
Diodes Incorporated · MOSFETs · SOT-23
DMG2301L-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±8 V maximum, with a threshold VGS(TH) of -0.4 V to -1.2 V at ID = -250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward current is rated at -0.75 A (t < 5 sec). |
| 3 | D | passive | Drain; drain-source voltage is rated at -20 V, with continuous drain current of -3 A and pulsed drain current of -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 2 | ||
| Continuous Drain Current | ID | -3 | A | VGS = -4.5V, steady state, TA = +25°C (Note 5) | 2 | ||
| Continuous Drain Current | ID | -1 | A | VGS = -4.5V, steady state, TA = +70°C (Note 5) | 2 | ||
| Pulsed Drain Current | IDM | -10 | A | Repetitive rating, pulse width limited by junction temperature (Note 6) | 2 | ||
| Drain-Source Diode Forward Current | IS | -0.75 | A | t < 5 sec | 2 | ||
| Power Dissipation | PD | 1.5 | W | Note 5 (1in x 1in FR-4 PCB, 2oz copper) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 83 | °C/W | TA = +25°C (Note 5) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | TJ = +25°C, VDS = -16V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = 6V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -1.2 | V | VDS = VGS, ID = -250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 120 | mΩ | VGS = -4.5V, ID = -2.8A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 150 | mΩ | VGS = -2.5V, ID = -2.0A | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS = 0V, IS = -0.75A | 2 | ||
| Transient Thermal Resistance, Junction to Ambient (figure basis) | RθJA | 142 | °C/W | Figure 13 basis: RθJA(t) = r(t) * RθJA | 5 |
CAD (KiCad official)
- Symbol:
DMG2301L-13 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmg2301l-13-etched.step/dmg2301l-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg2301l-13.step/dmg2301l-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
ca97931a0a653bbb, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMG2301L-13
**Diodes Incorporated** · MOSFETs · SOT-23
DMG2301L-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±8 V maximum, with a threshold VGS(TH) of -0.4 V to -1.2 V at ID = -250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward current is rated at -0.75 A (t < 5 sec). |
| 3 | D | passive | Drain; drain-source voltage is rated at -20 V, with continuous drain current of -3 A and pulsed drain current of -10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -20 | V | | 2 |
| Gate-Source Voltage | VGSS | -8 | | 8 | V | | 2 |
| Continuous Drain Current | ID | | | -3 | A | VGS = -4.5V, steady state, TA = +25°C (Note 5) | 2 |
| Continuous Drain Current | ID | | | -1 | A | VGS = -4.5V, steady state, TA = +70°C (Note 5) | 2 |
| Pulsed Drain Current | IDM | | | -10 | A | Repetitive rating, pulse width limited by junction temperature (Note 6) | 2 |
| Drain-Source Diode Forward Current | IS | | | -0.75 | A | t < 5 sec | 2 |
| Power Dissipation | PD | | | 1.5 | W | Note 5 (1in x 1in FR-4 PCB, 2oz copper) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 83 | °C/W | TA = +25°C (Note 5) | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | TJ = +25°C, VDS = -16V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = 6V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.4 | | -1.2 | V | VDS = VGS, ID = -250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 120 | mΩ | VGS = -4.5V, ID = -2.8A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 150 | mΩ | VGS = -2.5V, ID = -2.0A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS = 0V, IS = -0.75A | 2 |
| Transient Thermal Resistance, Junction to Ambient (figure basis) | RθJA | | | 142 | °C/W | Figure 13 basis: RθJA(t) = r(t) * RθJA | 5 |
## CAD (KiCad official)
- Symbol: `DMG2301L-13`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmg2301l-13-etched.step` / `dmg2301l-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg2301l-13.step` / `dmg2301l-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905907478020096) (7 pp, sha256 `ca97931a0a653bbb`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmg2301l-13-datasheet.pdf)