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DMG2301L-13

Diodes Incorporated · MOSFETs · SOT-23

DMG2301L-13 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±8 V maximum, with a threshold VGS(TH) of -0.4 V to -1.2 V at ID = -250µA.
2 S passive Source of the P-channel MOSFET; the body diode forward current is rated at -0.75 A (t < 5 sec).
3 D passive Drain; drain-source voltage is rated at -20 V, with continuous drain current of -3 A and pulsed drain current of -10 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -20 V 2
Gate-Source Voltage VGSS -8 8 V 2
Continuous Drain Current ID -3 A VGS = -4.5V, steady state, TA = +25°C (Note 5) 2
Continuous Drain Current ID -1 A VGS = -4.5V, steady state, TA = +70°C (Note 5) 2
Pulsed Drain Current IDM -10 A Repetitive rating, pulse width limited by junction temperature (Note 6) 2
Drain-Source Diode Forward Current IS -0.75 A t < 5 sec 2
Power Dissipation PD 1.5 W Note 5 (1in x 1in FR-4 PCB, 2oz copper) 2
Thermal Resistance, Junction to Ambient RθJA 83 °C/W TA = +25°C (Note 5) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA TJ = +25°C, VDS = -16V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = 6V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) -0.4 -1.2 V VDS = VGS, ID = -250µA 2
Static Drain-Source On-Resistance RDS(ON) 120 mΩ VGS = -4.5V, ID = -2.8A 2
Static Drain-Source On-Resistance RDS(ON) 150 mΩ VGS = -2.5V, ID = -2.0A 2
Diode Forward Voltage VSD -1.2 V VGS = 0V, IS = -0.75A 2
Transient Thermal Resistance, Junction to Ambient (figure basis) RθJA 142 °C/W Figure 13 basis: RθJA(t) = r(t) * RθJA 5

CAD (KiCad official)

  • Symbol: DMG2301L-13
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmg2301l-13-etched.step / dmg2301l-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg2301l-13.step / dmg2301l-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 ca97931a0a653bbb, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF