component
DMC4050SSD-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMC4050SSD-HXY
HXY MOSFET · MOSFETs · SOP-8
DMC4050SSD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS = 40V and ID = 7.2A at TA=25℃. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), rated VGS ±20V with VGS(th) 1.0V to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS = -40V and ID = -6.5A at TA=25℃. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), rated VGS ±20V with VGS(th) -1.0V to -2.5V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally with pin 6; VDS = -40V max. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally with pin 5; VDS = -40V max. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally with pin 8; VDS = 40V max. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally with pin 7; VDS = 40V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 40 | V | N-Ch, TC=25℃ | 1 | ||
| P-ch Drain-Source Voltage | VDS | -40 | V | P-Ch, TC=25℃ | 1 | ||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | N-Ch | 1 | |
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | P-Ch | 1 | |
| N-ch Continuous Drain Current | ID | 7.2 | A | TA=25℃, VGS@10V | 1 | ||
| P-ch Continuous Drain Current | ID | -6.5 | A | TA=25℃, VGS@10V | 1 | ||
| N-ch Continuous Drain Current | ID | 5.6 | A | TA=70℃, VGS@10V | 1 | ||
| P-ch Continuous Drain Current | ID | -5.1 | A | TA=70℃, VGS@10V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 23 | A | N-Ch | 1 | ||
| P-ch Pulsed Drain Current | IDM | -22 | A | P-Ch | 1 | ||
| N-ch Single Pulse Avalanche Energy | EAS | 16.2 | mJ | N-Ch | 1 | ||
| P-ch Single Pulse Avalanche Energy | EAS | 39 | mJ | P-Ch | 1 | ||
| N-ch Avalanche Current | IAS | 18 | A | N-Ch | 1 | ||
| P-ch Avalanche Current | IAS | -28 | A | P-Ch | 1 | ||
| N-ch Total Power Dissipation | PD | 1.67 | W | TA=25℃ | 1 | ||
| P-ch Total Power Dissipation | PD | 1.67 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 30 | ℃/W | 1 | |||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 20 | 26 | mΩ | VGS=10V, ID=5A | 2 | |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 28 | 33 | mΩ | VGS=4.5V, ID=4A | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| N-ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 | ||
| N-ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 | ||
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-ch Continuous Source Current | IS | 6.1 | A | VG=VD=0V, Force Current | 2 | ||
| N-ch Pulsed Source Current | ISM | 23 | A | VG=VD=0V, Force Current | 2 | ||
| N-ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 35 | 44 | mΩ | VGS=-10V, ID=-6A | 3 | |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 55 | 68 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 3 | |
| P-ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 | ||
| P-ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-ch Continuous Source Current | IS | -6 | A | VG=VD=0V, Force Current | 3 | ||
| P-ch Pulsed Source Current | ISM | -22 | A | VG=VD=0V, Force Current | 3 | ||
| P-ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 | ||
| N-ch BVDSS Temperature Coefficient | BVDSS/ΔTJ | 0.034 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| N-ch VGS(th) Temperature Coefficient | ΔVGS(th) | -4.56 | mV/℃ | 2 | |||
| P-ch BVDSS Temperature Coefficient | BVDSS/ΔTJ | -0.02 | V/℃ | Reference to 25℃, ID=-1mA | 3 | ||
| P-ch VGS(th) Temperature Coefficient | ΔVGS(th) | 3.72 | mV/℃ | 3 |
CAD (KiCad official)
- Symbol:
DMC4050SSD-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
dmc4050ssd-hxy-etched.step/dmc4050ssd-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc4050ssd-hxy.step/dmc4050ssd-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
f0e118cbe86f31bf, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMC4050SSD-HXY
**HXY MOSFET** · MOSFETs · SOP-8
DMC4050SSD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS = 40V and ID = 7.2A at TA=25℃. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), rated VGS ±20V with VGS(th) 1.0V to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS = -40V and ID = -6.5A at TA=25℃. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), rated VGS ±20V with VGS(th) -1.0V to -2.5V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally with pin 6; VDS = -40V max. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally with pin 5; VDS = -40V max. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally with pin 8; VDS = 40V max. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally with pin 7; VDS = 40V max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | | | 40 | V | N-Ch, TC=25℃ | 1 |
| P-ch Drain-Source Voltage | VDS | | | -40 | V | P-Ch, TC=25℃ | 1 |
| N-ch Gate-Source Voltage | VGS | -20 | | 20 | V | N-Ch | 1 |
| P-ch Gate-Source Voltage | VGS | -20 | | 20 | V | P-Ch | 1 |
| N-ch Continuous Drain Current | ID | | | 7.2 | A | TA=25℃, VGS@10V | 1 |
| P-ch Continuous Drain Current | ID | | | -6.5 | A | TA=25℃, VGS@10V | 1 |
| N-ch Continuous Drain Current | ID | | | 5.6 | A | TA=70℃, VGS@10V | 1 |
| P-ch Continuous Drain Current | ID | | | -5.1 | A | TA=70℃, VGS@10V | 1 |
| N-ch Pulsed Drain Current | IDM | | | 23 | A | N-Ch | 1 |
| P-ch Pulsed Drain Current | IDM | | | -22 | A | P-Ch | 1 |
| N-ch Single Pulse Avalanche Energy | EAS | | | 16.2 | mJ | N-Ch | 1 |
| P-ch Single Pulse Avalanche Energy | EAS | | | 39 | mJ | P-Ch | 1 |
| N-ch Avalanche Current | IAS | | | 18 | A | N-Ch | 1 |
| P-ch Avalanche Current | IAS | | | -28 | A | P-Ch | 1 |
| N-ch Total Power Dissipation | PD | | | 1.67 | W | TA=25℃ | 1 |
| P-ch Total Power Dissipation | PD | | | 1.67 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 75 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 30 | ℃/W | | 1 |
| N-ch Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, ID=250uA | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | | 20 | 26 | mΩ | VGS=10V, ID=5A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | | 28 | 33 | mΩ | VGS=4.5V, ID=4A | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-ch Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 |
| N-ch Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |
| N-ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-ch Continuous Source Current | IS | | | 6.1 | A | VG=VD=0V, Force Current | 2 |
| N-ch Pulsed Source Current | ISM | | | 23 | A | VG=VD=0V, Force Current | 2 |
| N-ch Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, ID=-250uA | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | | 35 | 44 | mΩ | VGS=-10V, ID=-6A | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | | 55 | 68 | mΩ | VGS=-4.5V, ID=-4A | 3 |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-ch Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 |
| P-ch Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 |
| P-ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-ch Continuous Source Current | IS | | | -6 | A | VG=VD=0V, Force Current | 3 |
| P-ch Pulsed Source Current | ISM | | | -22 | A | VG=VD=0V, Force Current | 3 |
| P-ch Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
| N-ch BVDSS Temperature Coefficient | BVDSS/ΔTJ | | 0.034 | | V/℃ | Reference to 25℃, ID=1mA | 2 |
| N-ch VGS(th) Temperature Coefficient | ΔVGS(th) | | -4.56 | | mV/℃ | | 2 |
| P-ch BVDSS Temperature Coefficient | BVDSS/ΔTJ | | -0.02 | | V/℃ | Reference to 25℃, ID=-1mA | 3 |
| P-ch VGS(th) Temperature Coefficient | ΔVGS(th) | | 3.72 | | mV/℃ | | 3 |
## CAD (KiCad official)
- Symbol: `DMC4050SSD-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `dmc4050ssd-hxy-etched.step` / `dmc4050ssd-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmc4050ssd-hxy.step` / `dmc4050ssd-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/dmc4050ssd-hxy-datasheet.pdf) (9 pp, sha256 `f0e118cbe86f31bf`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmc4050ssd-hxy-datasheet.pdf)