component
DMC3071LVT-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMC3071LVT-13
Diodes Incorporated · MOSFETs · TSOT-26
DMC3071LVT-13 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of Q1 N-channel MOSFET, with a VGS(TH) of 1.0V to 2.5V and an absolute maximum VGSS of ±20V. |
| 2 | S2 | passive | Source of Q2 P-channel MOSFET, rated for VDSS of -30V and continuous drain current of -3.3A at TA = +25°C. |
| 3 | G2 | input | Gate of Q2 P-channel MOSFET, with a VGS(TH) of -1V to -2.5V and an absolute maximum VGSS of ±20V. |
| 4 | D2 | passive | Drain of Q2 P-channel MOSFET, rated for VDSS of -30V and pulsed drain current IDM of -10A. |
| 5 | S1 | passive | Source of Q1 N-channel MOSFET, rated for VDSS of 30V and continuous drain current of 4.6A at TA = +25°C. |
| 6 | D1 | passive | Drain of Q1 N-channel MOSFET, rated for VDSS of 30V and pulsed drain current IDM of 20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage Q1 N-channel | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Drain-Source Breakdown Voltage Q2 P-channel | BVDSS | -30 | V | VGS = 0V, ID = -250µA | 3 | ||
| Zero Gate Voltage Drain Current Q1 | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current Q2 | IDSS | -1 | µA | VDS = -30V, VGS = 0V | 3 | ||
| Gate-Source Leakage Q1 | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate-Source Leakage Q2 | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage Q1 | VGS(TH) | 1 | 2.5 | V | VDS = VGS, ID = 250μA | 2 | |
| Gate Threshold Voltage Q2 | VGS(TH) | -1 | -2.5 | V | VDS = VGS, ID = -250μA | 3 | |
| Static Drain-Source On-Resistance Q1 at VGS=10V | RDS(ON) | 34 | 50 | mΩ | VGS = 10V, ID = 3.5A | 2 | |
| Static Drain-Source On-Resistance Q1 at VGS=4.5V | RDS(ON) | 44 | 90 | mΩ | VGS = 4.5V, ID = 2.0A | 2 | |
| Static Drain-Source On-Resistance Q2 at VGS=-10V | RDS(ON) | 83 | 95 | mΩ | VGS = -10V, ID = -3.8A | 3 | |
| Static Drain-Source On-Resistance Q2 at VGS=-4.5V | RDS(ON) | 128 | 140 | mΩ | VGS = -4.5V, ID = -3.0A | 3 | |
| Diode Forward Voltage Q1 | VSD | 0.8 | 1 | V | VGS = 0V, IS = 1A | 2 | |
| Diode Forward Voltage Q2 | VSD | -0.8 | -1.2 | V | VGS = 0V, IS = -1A | 3 | |
| Gate-Source Voltage Q1 and Q2 | VGSS | -20 | 20 | V | 2 | ||
| Drain-Source Voltage Q1 | VDSS | 30 | V | 2 | |||
| Drain-Source Voltage Q2 | VDSS | -30 | V | 2 | |||
| Continuous Drain Current Q1 TA=+25°C | ID | 4.6 | A | VGS = 10V, steady state, TA = +25°C | 2 | ||
| Continuous Drain Current Q1 TA=+70°C | ID | 3.6 | A | VGS = 10V, steady state, TA = +70°C | 2 | ||
| Continuous Drain Current Q2 TA=+25°C | ID | -3.3 | A | VGS = 10V, steady state, TA = +25°C | 2 | ||
| Continuous Drain Current Q2 TA=+70°C | ID | -2.6 | A | VGS = 10V, steady state, TA = +70°C | 2 | ||
| Maximum Continuous Body Diode Forward Current Q1 | IS | 1.5 | A | Note 6 | 2 | ||
| Maximum Continuous Body Diode Forward Current Q2 | IS | -1.3 | A | Note 6 | 2 | ||
| Pulsed Drain Current Q1 | IDM | 20 | A | 380µs Pulse, Duty Cycle = 1% | 2 | ||
| Pulsed Drain Current Q2 | IDM | -10 | A | 380µs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation TA=+25°C (Note 5) | PD | 0.7 | W | TA = +25°C, Note 5 | 2 | ||
| Total Power Dissipation TA=+25°C (Note 6) | PD | 1.1 | W | TA = +25°C, Note 6 | 2 | ||
| Thermal Resistance Junction to Ambient (Note 5) | RJA | 186 | °C/W | Steady state, Note 5 | 2 | ||
| Thermal Resistance Junction to Ambient (Note 6) | RJA | 117 | °C/W | Steady state, Note 6 | 2 | ||
| Thermal Resistance Junction to Case | RJC | 45 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance Junction to Ambient (transient reference) | RθJA | 165 | ℃/W | Figure 25 reference, single pulse duty cycle | 8 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMC3071LVT-13 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmc3071lvt-13-etched.step/dmc3071lvt-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc3071lvt-13.step/dmc3071lvt-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
0eb550aaebf6652a, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).