main
Ray Set visibility: public 5ef5915
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{
  "schema_version": 1,
  "type": "component",
  "slug": "dmc2400uv-13",
  "title": "DMC2400UV-13",
  "brief": "Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors",
    "dmc2400uv-13",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "DMC2400UV-13",
    "manufacturer": "Diodes Incorporated",
    "package": "SOT-563",
    "pin_count": 6,
    "category": "Transistors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.diodes.com/assets/Datasheets/DMC2400UV-13.pdf",
    "parts": {
      "symbol": "dmc2400uv-13.kicad_sym",
      "footprint": "dmc2400uv-13.kicad_mod",
      "model_3d": "dmc2400uv-13-hero.glb",
      "model_3d_plain": "dmc2400uv-13-etched.glb",
      "model_3d_step": "dmc2400uv-13-etched.step",
      "model_3d_step_plain": "dmc2400uv-13.step",
      "lbr": "dmc2400uv-13.lbr"
    },
    "distributor_links": {
      "lcsc": "C500791",
      "digikey": "DMC2400UV-13DITR-ND",
      "mouser": "621-DMC2400UV-13"
    },
    "distributor_check": {
      "checked_at": "2026-11-12T08:43:09Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "DMC2400UV-13DITR-ND",
        "status": "found"
      },
      "mouser": {
        "pn": "621-DMC2400UV-13",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of Q1, the 20V N-channel enhancement-mode MOSFET (VGSS ±12V)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "ESD-protected gate of Q1, the N-channel MOSFET, with VGS(TH) 0.5V to 0.9V and VGSS ±12V."
      },
      {
        "number": "3",
        "name": "D2",
        "type": "passive",
        "description": "Drain of Q2, the -20V P-channel enhancement-mode MOSFET (ID -700mA at VGS = -4.5V, TA = +25°C)."
      },
      {
        "number": "4",
        "name": "S2",
        "type": "passive",
        "description": "Source of Q2, the -20V P-channel enhancement-mode MOSFET (VGSS ±8V)."
      },
      {
        "number": "5",
        "name": "G2",
        "type": "input",
        "description": "ESD-protected gate of Q2, the P-channel MOSFET, with VGS(TH) -0.5V to -1.0V and VGSS ±8V."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of Q1, the 20V N-channel enhancement-mode MOSFET (ID 1030mA at VGS = 4.5V, TA = +25°C)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The top-view pin-out drawing labels the pins (top row left to right: D1, G2, S2; bottom row: S1, G1,",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 10,
        "cost_usd": 0.0782,
        "at": "2026-11-12T08:43:02"
      },
      "datasheet": {
        "url": "https://www.diodes.com/assets/Datasheets/DMC2400UV-13.pdf",
        "pages": 10,
        "sha256": "281033359650bed4",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 6,
        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "file": "dmc2400uv-13.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "footprint_binding": "identity",
        "sha256": "76c34aa4905777c0a8abe4718019904a3a9f8343cab7cc056f4516b7ef5165fc",
        "checked": "2026-11-12",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "dmc2400uv-13-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
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        "footprint_binding": "identity",
        "sha256": "25a5529218a54ca28d6afdad41aec5bba82bf8baca82bd8c110ade8bd7a1b710",
        "checked": "2026-11-12",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ],
    "package_dims": {
      "package_code": "SOT563",
      "source_page": 9,
      "D": {
        "nom_mm": 1.6,
        "range_mm": [
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      },
      "E1": {
        "nom_mm": 1.2,
        "range_mm": [
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      },
      "E": {
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        "range_mm": [
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      "e": {
        "nom_mm": 0.5,
        "range_mm": [
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      },
      "A": {
        "nom_mm": 0.6,
        "range_mm": [
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      },
      "source": "datasheet package drawing, every number found on its page (extract_pins --task dims)",
      "model_check": {
        "file": "dmc2400uv-13.step",
        "verdict": "PASS",
        "reasons": [
          "height and body within the datasheet's package drawing"
        ],
        "by": "factory/package_fit.py"
      }
    }
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Diodes Incorporated",
      "Package": "SOT-563",
      "Category": "Transistors",
      "Pins": "6"
    },
    "appearance": {
      "contacts": {
        "quote": " Terminal Connections: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper",
        "page": 1,
        "doc": "ds.pdf",
        "material": "Copper",
        "plating": "tin"
      },
      "version": 1,
      "datasheet_sha256": "281033359650bed44f79efb6d672b018c72ed5d80bd60046b637d22748eec643"
    },
    "characteristics": {
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      "source": "datasheet",
      "datasheet_sha256": "281033359650bed44f79efb6d672b018c72ed5d80bd60046b637d22748eec643",
      "rows": [
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          "max": 20,
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          "name": "Q1 Continuous Drain Current, steady state",
          "symbol": "ID",
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          "max": 1030,
          "conditions": "VGS = 4.5V; TA = +25°C; steady state",
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          "min": null,
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          "max": 800,
          "conditions": "VGS = 4.5V; TA = +70°C; steady state",
          "source_page": 2,
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        {
          "name": "Q1 Continuous Drain Current, t<10s",
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          "conditions": "VGS = 4.5V; TA = +70°C; t<10s",
          "source_page": 2,
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          "name": "Q1 Continuous Drain Current, steady state",
          "symbol": "ID",
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          "unit": "mA",
          "min": null,
          "typ": null,
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          "conditions": "VGS = 1.8V; TA = +25°C; steady state",
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          "name": "Q1 Continuous Drain Current, steady state",
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          "conditions": "VGS = 1.8V; TA = +70°C; steady state",
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        {
          "name": "Q1 Continuous Drain Current, t<10s",
          "symbol": "ID",
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          "conditions": "VGS = 1.8V; TA = +25°C; t<10s",
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        {
          "name": "Q1 Continuous Drain Current, t<10s",
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          "max": 700,
          "conditions": "VGS = 1.8V; TA = +70°C; t<10s",
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        {
          "name": "Q1 Pulsed Drain Current",
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          "min": null,
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          "max": 3,
          "conditions": "10µs pulse, duty cycle = 1%",
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        {
          "name": "Q1 Maximum Body Diode Continuous Current",
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          "kind": "absolute_maximum",
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        {
          "name": "Q2 Gate-Source Voltage",
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        {
          "name": "Q2 Continuous Drain Current, steady state",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": -700,
          "conditions": "VGS = -4.5V; TA = +25°C; steady state",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Q2 Continuous Drain Current, steady state",
          "symbol": "ID",
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          "min": null,
          "typ": null,
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          "source_page": 2,
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          "conditions": "VGS = -4.5V; TA = +25°C; t<10s",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Q2 Continuous Drain Current, t<10s",
          "symbol": "ID",
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          "min": null,
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          "conditions": "VGS = -4.5V; TA = +70°C; t<10s",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Q2 Continuous Drain Current, steady state",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": -460,
          "conditions": "VGS = -1.8V; TA = +25°C; steady state",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Q2 Continuous Drain Current, steady state",
          "symbol": "ID",
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          "min": null,
          "typ": null,
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          "conditions": "VGS = -1.8V; TA = +70°C; steady state",
          "source_page": 2,
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        {
          "name": "Q2 Continuous Drain Current, t<10s",
          "symbol": "ID",
          "kind": "absolute_maximum",
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          "min": null,
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          "source": "datasheet"
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        {
          "name": "Q2 Continuous Drain Current, t<10s",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "mA",
          "min": null,
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          "max": -420,
          "conditions": "VGS = -1.8V; TA = +70°C; t<10s",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Q2 Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
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          "max": -2,
          "conditions": "10µs pulse, duty cycle = 1%",
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          "source": "datasheet"
        },
        {
          "name": "Q2 Maximum Body Diode Continuous Current",
          "symbol": "IS",
          "kind": "absolute_maximum",
          "unit": "mA",
          "min": null,
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        {
          "name": "Total Power Dissipation (Note 6)",
          "symbol": "PD",
          "kind": "thermal",
          "unit": "W",
          "min": null,
          "typ": null,
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          "conditions": "Note 6 (FR-4, 2oz copper, minimum recommended pad layout)",
          "source_page": 2,
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        {
          "name": "Thermal Resistance, Junction to Ambient, steady state (Note 6)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
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          "conditions": "Note 6; steady state",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Thermal Resistance, Junction to Ambient, t<10s (Note 6)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
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          "conditions": "Note 6; t<10s",
          "source_page": 2,
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        {
          "name": "Total Power Dissipation (Note 7)",
          "symbol": "PD",
          "kind": "thermal",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "Note 7 (FR-4, 2oz copper, 1 inch square copper plate)",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Thermal Resistance, Junction to Ambient, steady state (Note 7)",
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          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Operating and Storage Temperature Range",
          "symbol": "TJ, TSTG",
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          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Q1 Drain-Source Breakdown Voltage",
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          "unit": "V",
          "min": 20,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = 1mA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Q1 Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "TJ = +25°C; VDS = 20V, VGS = 0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Q1 Gate-Source Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -1,
          "typ": null,
          "max": 1,
          "conditions": "VGS = ±5V, VDS = 0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Q1 Gate-Source Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -4,
          "typ": null,
          "max": 4,
          "conditions": "VGS = ±8V, VDS = 0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Q1 Gate Threshold Voltage",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
          "min": 0.5,
          "typ": null,
          "max": 0.9,
          "conditions": "VDS = VGS, ID = 250µA",
          "source_page": 3,
          "source": "datasheet"
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