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DMC2400UV-13

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Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsdmc2400uv-13factory-2.0.0extractor-text

Verified DMC2400UV-13

by Ray · last 12 Nov 2026 · 1 record · files match
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Verification log 1 record

12 Nov 2026RayPublished by the parts factory: tier mfr, 6 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMC2400UV-13 · SOT-563 · 6 pins
  • ✓copper: 6 copper pads, none touching another net
  • ✓datasheet: all 6 pin names found in the 10-page datasheet
  • ✓distributor: lcsc C500791, digikey DMC2400UV-13DITR-ND, mouser 621-DMC2400UV-13
  • ✓family: SOT-563
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-o04jlsxy/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.9)
  • ✓pads: 6 pins = 6 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 6 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 18 kB, viewers/symbol.html 9 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmc2400uv-13.kicad_sym✓ dmc2400uv-13.kicad_mod✓ dmc2400uv-13.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

DMC2400UV-13

Diodes Incorporated · MOSFETs · SOT-563

DMC2400UV-13 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Q1, the 20V N-channel enhancement-mode MOSFET (VGSS ±12V).
2 G1 input ESD-protected gate of Q1, the N-channel MOSFET, with VGS(TH) 0.5V to 0.9V and VGSS ±12V.
3 D2 passive Drain of Q2, the -20V P-channel enhancement-mode MOSFET (ID -700mA at VGS = -4.5V, TA = +25°C).
4 S2 passive Source of Q2, the -20V P-channel enhancement-mode MOSFET (VGSS ±8V).
5 G2 input ESD-protected gate of Q2, the P-channel MOSFET, with VGS(TH) -0.5V to -1.0V and VGSS ±8V.
6 D1 passive Drain of Q1, the 20V N-channel enhancement-mode MOSFET (ID 1030mA at VGS = 4.5V, TA = +25°C).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Q1 Drain-Source Voltage VDSS 20 V 2
Q1 Gate-Source Voltage VGSS -12 12 V 2
Q1 Continuous Drain Current, steady state ID 1030 mA VGS = 4.5V; TA = +25°C; steady state 2
Q1 Continuous Drain Current, steady state ID 800 mA VGS = 4.5V; TA = +70°C; steady state 2
Q1 Continuous Drain Current, t<10s ID 1150 mA VGS = 4.5V; TA = +25°C; t<10s 2
Q1 Continuous Drain Current, t<10s ID 900 mA VGS = 4.5V; TA = +70°C; t<10s 2
Q1 Continuous Drain Current, steady state ID 740 mA VGS = 1.8V; TA = +25°C; steady state 2
Q1 Continuous Drain Current, steady state ID 570 mA VGS = 1.8V; TA = +70°C; steady state 2
Q1 Continuous Drain Current, t<10s ID 870 mA VGS = 1.8V; TA = +25°C; t<10s 2
Q1 Continuous Drain Current, t<10s ID 700 mA VGS = 1.8V; TA = +70°C; t<10s 2
Q1 Pulsed Drain Current IDM 3 A 10µs pulse, duty cycle = 1% 2
Q1 Maximum Body Diode Continuous Current IS 800 mA 2
Q2 Drain-Source Voltage VDSS -20 V 2
Q2 Gate-Source Voltage VGSS -8 8 V 2
Q2 Continuous Drain Current, steady state ID -700 mA VGS = -4.5V; TA = +25°C; steady state 2
Q2 Continuous Drain Current, steady state ID -550 mA VGS = -4.5V; TA = +70°C; steady state 2
Q2 Continuous Drain Current, t<10s ID -820 mA VGS = -4.5V; TA = +25°C; t<10s 2
Q2 Continuous Drain Current, t<10s ID -640 mA VGS = -4.5V; TA = +70°C; t<10s 2
Q2 Continuous Drain Current, steady state ID -460 mA VGS = -1.8V; TA = +25°C; steady state 2
Q2 Continuous Drain Current, steady state ID -350 mA VGS = -1.8V; TA = +70°C; steady state 2
Q2 Continuous Drain Current, t<10s ID -550 mA VGS = -1.8V; TA = +25°C; t<10s 2
Q2 Continuous Drain Current, t<10s ID -420 mA VGS = -1.8V; TA = +70°C; t<10s 2
Q2 Pulsed Drain Current IDM -2 A 10µs pulse, duty cycle = 1% 2
Q2 Maximum Body Diode Continuous Current IS -800 mA 2
Total Power Dissipation (Note 6) PD 0.45 W Note 6 (FR-4, 2oz copper, minimum recommended pad layout) 2
Thermal Resistance, Junction to Ambient, steady state (Note 6) RθJA 281 °C/W Note 6; steady state 2
Thermal Resistance, Junction to Ambient, t<10s (Note 6) RθJA 210 °C/W Note 6; t<10s 2
Total Power Dissipation (Note 7) PD 1 W Note 7 (FR-4, 2oz copper, 1 inch square copper plate) 2
Thermal Resistance, Junction to Ambient, steady state (Note 7) RθJA 129 °C/W Note 7; steady state 2
Thermal Resistance, Junction to Ambient, t<10s (Note 7) RθJA 97 °C/W Note 7; t<10s 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Q1 Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 1mA 3
Q1 Zero Gate Voltage Drain Current IDSS 100 nA TJ = +25°C; VDS = 20V, VGS = 0V 3
Q1 Gate-Source Leakage IGSS -1 1 µA VGS = ±5V, VDS = 0V 3
Q1 Gate-Source Leakage IGSS -4 4 µA VGS = ±8V, VDS = 0V 3
Q1 Gate Threshold Voltage VGS(TH) 0.5 0.9 V VDS = VGS, ID = 250µA 3
Q1 Static Drain-Source On-Resistance RDS(ON) 0.3 0.48 Ω VGS = 5.0V, ID = 200mA 3
Q1 Static Drain-Source On-Resistance RDS(ON) 0.35 0.5 Ω VGS = 4.5V, ID = 200mA 3
Q1 Static Drain-Source On-Resistance RDS(ON) 0.45 0.7 Ω VGS = 2.5V, ID = 200mA 3
Q1 Static Drain-Source On-Resistance RDS(ON) 0.55 0.9 Ω VGS = 1.8V, ID = 100mA 3
Q1 Static Drain-Source On-Resistance RDS(ON) 0.65 1.5 Ω VGS = 1.5V, ID = 50mA 3
Q1 Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 500mA 3
Q2 Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -1mA 6
Q2 Zero Gate Voltage Drain Current IDSS -100 nA TJ = +25°C; VDS = -20V, VGS = 0V 6
Q2 Gate-Source Leakage IGSS -1 1 µA VGS = ±5V, VDS = 0V 6
Q2 Gate-Source Leakage IGSS -5 5 µA VGS = ±8V, VDS = 0V 6
Q2 Gate Threshold Voltage VGS(TH) -0.5 -1 V VDS = VGS, ID = -250µA 6
Q2 Static Drain-Source On-Resistance RDS(ON) 0.67 0.97 Ω VGS = -5V, ID = -100mA 6
Q2 Static Drain-Source On-Resistance RDS(ON) 0.7 1 Ω VGS = -4.5V, ID = -100mA 6
Q2 Static Drain-Source On-Resistance RDS(ON) 0.9 1.5 Ω VGS = -2.5V, ID = -80mA 6
Q2 Static Drain-Source On-Resistance RDS(ON) 1.2 2 Ω VGS = -1.8V, ID = -40mA 6
Q2 Static Drain-Source On-Resistance RDS(ON) 1.5 3 Ω VGS = -1.5V, ID = -30mA 6
Q2 Diode Forward Voltage VSD -0.75 -1.2 V VGS = 0V, IS = -330mA 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper 1

CAD (KiCad official)

  • Symbol: DMC2400UV-13
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dmc2400uv-13-etched.step / dmc2400uv-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmc2400uv-13.step / dmc2400uv-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (10 pp, sha256 281033359650bed4, retrieved 2026-11-12, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF