# DHE1M

**FUXINSEMI** · Fast Recovery / High Efficiency Diodes · SOD-123

DHE1M from FUXINSEMI, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode terminal of the DHE1M rectifier, marked by the color band at the cathode end of the package; device VRRM is 1000 V and average rectified current is 1.0 A. |
| 2 | ANODE | passive | Anode terminal of the DHE1M rectifier, which conducts forward current toward the cathode (pin 1) within the device ratings of 1000 V VRRM and 1.0 A average forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM |  |  | 1000 | V |  | 1 |
| Maximum RMS voltage | VRMS |  |  | 700 | V |  | 1 |
| Maximum DC blocking voltage | VDC |  |  | 1000 | V |  | 1 |
| Maximum average forward rectified current | I(AV) |  |  | 1 | A | at TL=100 C | 1 |
| Peak forward surge current | IFSM |  |  | 25 | A | 8.3ms single half sine-wave superimposed on rated load | 1 |
| Maximum instantaneous forward voltage | VF |  |  | 1.7 | V | at 1.0A | 1 |
| Maximum DC reverse current | IR |  |  | 5 | µA | TA=25 C at rated DC blocking voltage | 1 |
| Maximum DC reverse current | IR |  |  | 50 | µA | TA=100 C at rated DC blocking voltage | 1 |
| Maximum reverse recovery time | trr |  | 50 | 75 | ns | NOTE 1: IF=0.5A, IR=1.0A, Irr=0.25A | 1 |
| Typical junction capacitance | CJ |  | 20 |  | pF | NOTE 2: measured at 1MHz and applied reverse voltage of 4.0V D.C. | 1 |
| Typical thermal resistance | RθJA |  | 85 |  | C/W | NOTE 3: P.C.B. mounted with 0.2x0.2in (5.0x5.0mm) copper pad areas | 1 |
| Operating junction and storage temperature range | TJ,TSTG | -55 |  | 150 | C |  | 1 |

## CAD (KiCad official)

- Symbol: `DHE1M`
- Footprint: `Diode_SMD:D_SOD-123F`
- 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files: `dhe1m-etched.step` / `dhe1m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dhe1m.step` / `dhe1m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [FUXINSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588917022293954560) (4 pp, sha256 `7d088f93f1031992`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dhe1m-datasheet.pdf)