component
DHE1M
Public Made by Adomby adom
FUXINSEMI Fast Recovery / High Efficiency Diodes, SOD-123. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDHE1M
FUXINSEMI · Fast Recovery / High Efficiency Diodes · SOD-123
DHE1M from FUXINSEMI, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode terminal of the DHE1M rectifier, marked by the color band at the cathode end of the package; device VRRM is 1000 V and average rectified current is 1.0 A. |
| 2 | ANODE | passive | Anode terminal of the DHE1M rectifier, which conducts forward current toward the cathode (pin 1) within the device ratings of 1000 V VRRM and 1.0 A average forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 1000 | V | 1 | |||
| Maximum RMS voltage | VRMS | 700 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 1000 | V | 1 | |||
| Maximum average forward rectified current | I(AV) | 1 | A | at TL=100 C | 1 | ||
| Peak forward surge current | IFSM | 25 | A | 8.3ms single half sine-wave superimposed on rated load | 1 | ||
| Maximum instantaneous forward voltage | VF | 1.7 | V | at 1.0A | 1 | ||
| Maximum DC reverse current | IR | 5 | µA | TA=25 C at rated DC blocking voltage | 1 | ||
| Maximum DC reverse current | IR | 50 | µA | TA=100 C at rated DC blocking voltage | 1 | ||
| Maximum reverse recovery time | trr | 50 | 75 | ns | NOTE 1: IF=0.5A, IR=1.0A, Irr=0.25A | 1 | |
| Typical junction capacitance | CJ | 20 | pF | NOTE 2: measured at 1MHz and applied reverse voltage of 4.0V D.C. | 1 | ||
| Typical thermal resistance | RθJA | 85 | C/W | NOTE 3: P.C.B. mounted with 0.2x0.2in (5.0x5.0mm) copper pad areas | 1 | ||
| Operating junction and storage temperature range | TJ,TSTG | -55 | 150 | C | 1 |
CAD (KiCad official)
- Symbol:
DHE1M - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files:
dhe1m-etched.step/dhe1m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dhe1m.step/dhe1m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FUXINSEMI datasheet (4 pp, sha256
7d088f93f1031992, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).