# CSD87502Q2

**Texas Instruments** · MOSFETs · WSON-6(2x2)

CSD87502Q2 from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of FET 1 (Q1), pin 1 index corner on the top view; the dual FETs are rated 30 V VDS. |
| 2 | G1 | input | Gate of FET 1 (Q1); VGS rated ±20 V, optimized for 5 V gate drive. |
| 3 | D2 | passive | Drain of FET 2 (Q2), connected to the central D2 pad; VDS rated 30 V. |
| 4 | S2 | passive | Source of FET 2 (Q2). |
| 5 | G2 | input | Gate of FET 2 (Q2); VGS rated ±20 V, optimized for 5 V gate drive. |
| 6 | D1 | passive | Drain of FET 1 (Q1), connected to the central D1 pad; VDS rated 30 V. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6(2x2) |
| Category | Transistors |
| Pins | 7 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS |  |  | 30 | V | TA = 25°C | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V | TA = 25°C | 1 |
| Continuous Drain Current (Package limited) | ID |  |  | 5 | A | TA = 25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 23 | A | Max RθJA = 185 °C/W, pulse duration ≤100 μs, duty cycle ≤1% | 1 |
| Power Dissipation | PD |  |  | 2.3 | W | Typical RθJA = 55 °C/W on 1 inch2, 2 oz. Cu pad on 0.06 inch FR4 | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C | TA = 25°C | 1 |
| Avalanche Energy, single pulse | EAS |  |  | 3.1 | mJ | ID = 7.9 A, L = 0.1 mH, RG = 25 Ω | 1 |
| Drain-to-source voltage | BVDSS | 30 |  |  | V | VGS = 0 V, ID = 250 μA | 3 |
| Drain-to-source leakage current | IDSS |  |  | 1 | μA | VGS = 0 V, VDS = 24 V | 3 |
| Gate-to-source leakage current | IGSS |  |  | 4 | μA | VDS = 0 V, VGS = 20 V | 3 |
| Gate-to-source threshold voltage | VGS(th) | 1.2 | 1.6 | 2 | V | VDS = VGS, ID = 250 μA | 3 |
| Drain-to-source on-resistance | RDS(on) |  | 42 | 60 | mΩ | VGS = 3.8 V, ID = 4 A | 3 |
| Drain-to-source on-resistance | RDS(on) |  | 35.5 | 42 | mΩ | VGS = 4.5 V, ID = 4 A | 3 |
| Drain-to-source on-resistance | RDS(on) |  | 27 | 32.4 | mΩ | VGS = 10 V, ID = 4 A | 3 |
| Input capacitance | Ciss |  | 272 | 353 | pF | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 3 |
| Output capacitance | Coss |  | 42 | 55 | pF | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 3 |
| Reverse transfer capacitance | Crss |  | 22 | 29 | pF | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 3 |
| Gate charge total (4.5 V) | Qg |  | 2.2 | 2.9 | nC | VDS = 15 V, ID = 4 A | 3 |
| Gate charge total (10 V) | Qg |  | 4.6 | 6 | nC | VDS = 15 V, ID = 4 A | 3 |
| Diode forward voltage | VSD |  | 0.85 | 1 | V | ISD = 4 A, VGS = 0 V | 3 |
| Junction-to-ambient thermal resistance (1 inch2 Cu) | RθJA |  |  | 70 | °C/W | Device mounted on FR4 with 1 inch2 (6.45 cm2), 2 oz. Cu | 3 |
| Junction-to-ambient thermal resistance (min Cu) | RθJA |  |  | 185 | °C/W | Device mounted on FR4 with minimum Cu mounting area | 3 |
| Transconductance | gfs |  | 75 |  | S | VDS = 3 V, ID = 4 A | 3 |
| Series gate resistance | RG |  | 6.9 |  | Ω |  | 3 |
| Gate charge gate to drain | Qgd |  | 0.5 |  | nC | VDS = 15 V, ID = 4 A | 3 |
| Gate charge gate to source | Qgs |  | 1 |  | nC | VDS = 15 V, ID = 4 A | 3 |
| Gate charge at Vth | Qg(th) |  | 0.5 |  | nC | VDS = 15 V, ID = 4 A | 3 |
| Output charge | Qoss |  | 1.4 |  | nC | VDS = 15 V, VGS = 0 V | 3 |
| Turn on delay time | td(on) |  | 3 |  | ns | VDS = 15 V, VGS = 5 V, IDS = 4 A, RG = 0 Ω | 3 |
| Rise time | tr |  | 11 |  | ns | VDS = 15 V, VGS = 5 V, IDS = 4 A, RG = 0 Ω | 3 |
| Turn off delay time | td(off) |  | 12 |  | ns | VDS = 15 V, VGS = 5 V, IDS = 4 A, RG = 0 Ω | 3 |
| Fall time | tf |  | 3 |  | ns | VDS = 15 V, VGS = 5 V, IDS = 4 A, RG = 0 Ω | 3 |
| Reverse recovery charge | Qrr |  | 4 |  | nC | VDS = 15 V, IF = 4 A, di/dt = 300 A/μs | 3 |
| Reverse recovery time | trr |  | 6.4 |  | ns | VDS = 15 V, IF = 4 A, di/dt = 300 A/μs | 3 |

## CAD (KiCad official)

- Symbol: `CSD87502Q2`
- Footprint: `Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm`
- 3D model: WSON-6(2x2) (KiCad packages3D, STEP)
- 3D model files: `csd87502q2-etched.step` / `csd87502q2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd87502q2.step` / `csd87502q2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/csd87502q2.pdf) (12 pp, sha256 `13fc9b3d62f81f47`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/csd87502q2-datasheet.pdf)