# CSD19533Q5A

**Tokmas** · MOSFETs · DFN-8(5x6)

CSD19533Q5A from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, shown as S in the pin diagram on page 1; the datasheet gives no pin-specific limit for this terminal. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shown as S in the pin diagram on page 1; the datasheet gives no pin-specific limit for this terminal. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, shown as S in the pin diagram on page 1; the datasheet gives no pin-specific limit for this terminal. |
| 4 | G | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage is VGS ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 6 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 7 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 8 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate to Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power Dissipation | PD |  |  | 83 | W | TC=25℃ | 1 |
| Operating and Storage Temperature | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Continuous Drain Current (Silicon Limited) | ID |  |  | 74 | A | TC=25℃ | 1 |
| Continuous Drain Current (Silicon Limited) | ID |  |  | 47 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 260 | A |  | 1 |
| Avalanche Energy, Single Pulse | EAS |  |  | 245 | mJ | L=0.4mH, TC=25℃ | 1 |
| Thermal Resistance Junction-Ambient | RqJA |  |  | 50 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RqJC |  |  | 1.5 | ℃/W |  | 1 |
| Drain to Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS=0V, ID=250mA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 2 | V | VGS=VDS, ID=250mA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | mA | VGS=0V, VDS=100V, Tj=25℃ | 2 |
| Gate to Source Leakage Current | IGSS |  |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain to Source on Resistance | RDS(on) |  | 6.7 | 8 | mW | VGS=10V, ID=20A | 2 |
| Diode Forward Voltage | VSD |  | 0.9 | 1.2 | V | VGS=0V, IF=20A | 2 |

## CAD (KiCad official)

- Symbol: `CSD19533Q5A`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `csd19533q5a-etched.step` / `csd19533q5a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd19533q5a.step` / `csd19533q5a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tokmas datasheet](docs/csd19533q5a-datasheet.pdf) (6 pp, sha256 `d6617436db376a00`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/csd19533q5a-datasheet.pdf)