component
CSD19533Q5A
Public Made by Adomby adom
Tokmas MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD19533Q5A
Tokmas · MOSFETs · DFN-8(5x6)
CSD19533Q5A from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, shown as S in the pin diagram on page 1; the datasheet gives no pin-specific limit for this terminal. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shown as S in the pin diagram on page 1; the datasheet gives no pin-specific limit for this terminal. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, shown as S in the pin diagram on page 1; the datasheet gives no pin-specific limit for this terminal. |
| 4 | G | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage is VGS ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 6 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 7 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 8 | D | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is VDS 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 100 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 83 | W | TC=25℃ | 1 | ||
| Operating and Storage Temperature | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 74 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 47 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 260 | A | 1 | |||
| Avalanche Energy, Single Pulse | EAS | 245 | mJ | L=0.4mH, TC=25℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RqJA | 50 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RqJC | 1.5 | ℃/W | 1 | |||
| Drain to Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250mA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VGS=VDS, ID=250mA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | mA | VGS=0V, VDS=100V, Tj=25℃ | 2 | ||
| Gate to Source Leakage Current | IGSS | 100 | nA | VGS=±20V, VDS=0V | 2 | ||
| Drain to Source on Resistance | RDS(on) | 6.7 | 8 | mW | VGS=10V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | VGS=0V, IF=20A | 2 |
CAD (KiCad official)
- Symbol:
CSD19533Q5A - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
csd19533q5a-etched.step/csd19533q5a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd19533q5a.step/csd19533q5a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (6 pp, sha256
d6617436db376a00, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).