component
CSD19505KCS
Public Made by Adomby adom
Texas Instruments MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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csd19505kcs: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
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CSD19505KCS
Texas Instruments · MOSFETs · TO-220
CSD19505KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input rated for ±20V maximum gate-to-source voltage with 2.6V threshold voltage. |
| 2 | Drain | passive | Drain terminal rated for 80V maximum drain-to-source voltage and 150A maximum continuous drain current (package limited). |
| 3 | Source | power_in | Source terminal provides current return path and serves as gate-to-source voltage reference. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | BVDSS | 80 | V | VGS = 0V, ID = 250μA | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VGS = 0V, VDS = 64V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS = 0V, VGS = 20V | 3 | ||
| Gate-to-Source Threshold Voltage | VGS(th) | 2.2 | 2.6 | 3.2 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-Source On-Resistance (VGS = 6V) | RDS(on) | 2.9 | 3.8 | mΩ | VGS = 6V, ID = 100A | 3 | |
| Drain-to-Source On-Resistance (VGS = 10V) | RDS(on) | 2.6 | 3.1 | mΩ | VGS = 10V, ID = 100A | 3 | |
| Input Capacitance | Ciss | 6090 | 7820 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 | |
| Output Capacitance | Coss | 1600 | 2080 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 26 | 34 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 | |
| Series Gate Resistance | RG | 1.4 | 2.8 | Ω | 3 | ||
| Diode Forward Voltage | VSD | 0.9 | 1.1 | V | ISD = 100A, VGS = 0V | 3 | |
| Drain-to-Source Voltage | VDS | 80 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (Package limited) | ID | 150 | A | 1 | |||
| Continuous Drain Current (Silicon limited) | ID | 208 | A | TC = 25°C | 1 | ||
| Continuous Drain Current (Silicon limited) | ID | 147 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | Pulse duration ≤100μs, duty cycle ≤1% | 1 | ||
| Power Dissipation | PD | 300 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Avalanche Energy, single pulse | EAS | 510 | mJ | ID = 101A, L = 0.1mH, RG = 25Ω | 1 |
CAD (KiCad official)
- Symbol:
CSD19505KCS - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
csd19505kcs-etched.step/csd19505kcs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd19505kcs.step/csd19505kcs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (13 pp, sha256
f18b7d081f5ef731, retrieved 2026-09-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CSD19505KCS
**Texas Instruments** · MOSFETs · TO-220
CSD19505KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input rated for ±20V maximum gate-to-source voltage with 2.6V threshold voltage. |
| 2 | Drain | passive | Drain terminal rated for 80V maximum drain-to-source voltage and 150A maximum continuous drain current (package limited). |
| 3 | Source | power_in | Source terminal provides current return path and serves as gate-to-source voltage reference. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | BVDSS | 80 | | | V | VGS = 0V, ID = 250μA | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VGS = 0V, VDS = 64V | 3 |
| Gate-to-Source Leakage Current | IGSS | | | 100 | nA | VDS = 0V, VGS = 20V | 3 |
| Gate-to-Source Threshold Voltage | VGS(th) | 2.2 | 2.6 | 3.2 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-Source On-Resistance (VGS = 6V) | RDS(on) | | 2.9 | 3.8 | mΩ | VGS = 6V, ID = 100A | 3 |
| Drain-to-Source On-Resistance (VGS = 10V) | RDS(on) | | 2.6 | 3.1 | mΩ | VGS = 10V, ID = 100A | 3 |
| Input Capacitance | Ciss | | 6090 | 7820 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 |
| Output Capacitance | Coss | | 1600 | 2080 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 26 | 34 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 |
| Series Gate Resistance | RG | | 1.4 | 2.8 | Ω | | 3 |
| Diode Forward Voltage | VSD | | 0.9 | 1.1 | V | ISD = 100A, VGS = 0V | 3 |
| Drain-to-Source Voltage | VDS | | | 80 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (Package limited) | ID | | | 150 | A | | 1 |
| Continuous Drain Current (Silicon limited) | ID | | | 208 | A | TC = 25°C | 1 |
| Continuous Drain Current (Silicon limited) | ID | | | 147 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 400 | A | Pulse duration ≤100μs, duty cycle ≤1% | 1 |
| Power Dissipation | PD | | | 300 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Avalanche Energy, single pulse | EAS | | | 510 | mJ | ID = 101A, L = 0.1mH, RG = 25Ω | 1 |
## CAD (KiCad official)
- Symbol: `CSD19505KCS`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `csd19505kcs-etched.step` / `csd19505kcs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd19505kcs.step` / `csd19505kcs.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/csd19505kcs.pdf) (13 pp, sha256 `f18b7d081f5ef731`, retrieved 2026-09-24, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/csd19505kcs-datasheet.pdf)