component
CSD19505KCS
Public Made by Adomby adom
Texas Instruments MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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csd19505kcs: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
2 files changed
+274
README.md+27@@ -21,6 +21,33 @@ CSD19505KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | BVDSS | 80 | | | V | VGS = 0V, ID = 250μA | 3 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VGS = 0V, VDS = 64V | 3 |+| Gate-to-Source Leakage Current | IGSS | | | 100 | nA | VDS = 0V, VGS = 20V | 3 |+| Gate-to-Source Threshold Voltage | VGS(th) | 2.2 | 2.6 | 3.2 | V | VDS = VGS, ID = 250μA | 3 |+| Drain-to-Source On-Resistance (VGS = 6V) | RDS(on) | | 2.9 | 3.8 | mΩ | VGS = 6V, ID = 100A | 3 |+| Drain-to-Source On-Resistance (VGS = 10V) | RDS(on) | | 2.6 | 3.1 | mΩ | VGS = 10V, ID = 100A | 3 |+| Input Capacitance | Ciss | | 6090 | 7820 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 |+| Output Capacitance | Coss | | 1600 | 2080 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 |+| Reverse Transfer Capacitance | Crss | | 26 | 34 | pF | VGS = 0V, VDS = 40V, ƒ = 1MHz | 3 |+| Series Gate Resistance | RG | | 1.4 | 2.8 | Ω | | 3 |+| Diode Forward Voltage | VSD | | 0.9 | 1.1 | V | ISD = 100A, VGS = 0V | 3 |+| Drain-to-Source Voltage | VDS | | | 80 | V | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (Package limited) | ID | | | 150 | A | | 1 |+| Continuous Drain Current (Silicon limited) | ID | | | 208 | A | TC = 25°C | 1 |+| Continuous Drain Current (Silicon limited) | ID | | | 147 | A | TC = 100°C | 1 |+| Pulsed Drain Current | IDM | | | 400 | A | Pulse duration ≤100μs, duty cycle ≤1% | 1 |+| Power Dissipation | PD | | | 300 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |+| Avalanche Energy, single pulse | EAS | | | 510 | mJ | ID = 101A, L = 0.1mH, RG = 25Ω | 1 |+ ## CAD (KiCad official) - Symbol: `CSD19505KCS`
page.json+247@@ -133,6 +133,253 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f18b7d081f5ef731",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0V, VDS = 64V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0V, VGS = 20V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.2,+ "typ": 2.6,+ "max": 3.2,+ "conditions": "VDS = VGS, ID = 250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance (VGS = 6V)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 2.9,+ "max": 3.8,+ "conditions": "VGS = 6V, ID = 100A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance (VGS = 10V)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 2.6,+ "max": 3.1,+ "conditions": "VGS = 10V, ID = 100A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 6090,+ "max": 7820,+ "conditions": "VGS = 0V, VDS = 40V, ƒ = 1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1600,+ "max": 2080,+ "conditions": "VGS = 0V, VDS = 40V, ƒ = 1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 26,+ "max": 34,+ "conditions": "VGS = 0V, VDS = 40V, ƒ = 1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Series Gate Resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.4,+ "max": 2.8,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.9,+ "max": 1.1,+ "conditions": "ISD = 100A, VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Package limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Silicon limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 208,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Silicon limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 147,+ "conditions": "TC = 100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 400,+ "conditions": "Pulse duration ≤100μs, duty cycle ≤1%",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 510,+ "conditions": "ID = 101A, L = 0.1mH, RG = 25Ω",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],