# CSD18542KCS

**Texas Instruments** · MOSFETs · TO-220AB-3

CSD18542KCS from Texas Instruments, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet limits gate-to-source voltage to ±20 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal of the MOSFET; the datasheet rates drain-to-source voltage at 60 V and continuous drain current at 170 A (silicon limited) at TC = 25°C. |
| 3 | Source | passive | Source terminal of the MOSFET; the device operating and storage temperature range is −55 to 175 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220AB-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-source voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-to-source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous drain current (package limited) | ID |  |  | 200 | A | Package limited | 1 |
| Continuous drain current (silicon limited) | ID |  |  | 170 | A | Silicon limited, TC = 25°C | 1 |
| Continuous drain current (silicon limited) | ID |  |  | 120 | A | Silicon limited, TC = 100°C | 1 |
| Pulsed drain current | IDM |  |  | 400 | A | Pulse duration ≤100μs, duty cycle ≤1% | 1 |
| Power dissipation | PD |  |  | 200 | W |  | 1 |
| Operating junction and storage temperature | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Avalanche energy, single pulse | EAS |  |  | 281 | mJ | ID = 75A, L = 0.1mH, RG = 25Ω | 1 |
| Drain-to-source voltage | BVDSS | 60 |  |  | V | VGS = 0V, ID = 250μA | 3 |
| Drain-to-source leakage current | IDSS |  |  | 1 | μA | VGS = 0V, VDS = 48V | 3 |
| Gate-to-source leakage current | IGSS |  |  | 100 | nA | VDS = 0V, VGS = 20V | 3 |
| Gate-to-source threshold voltage | VGS(th) | 1.5 | 1.8 | 2.2 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-source on-resistance | RDS(on) |  | 4 | 5.1 | mΩ | VGS = 4.5V, ID = 100A | 3 |
| Drain-to-source on-resistance | RDS(on) |  | 3.3 | 4 | mΩ | VGS = 10V, ID = 100A | 3 |
| Input capacitance | Ciss |  | 3900 | 5070 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 |
| Output capacitance | Coss |  | 570 | 740 | pF |  | 3 |
| Reverse transfer capacitance | Crss |  | 11 | 14 | pF |  | 3 |
| Series gate resistance | RG |  | 1.3 | 2.6 | Ω |  | 3 |
| Gate charge total (4.5V) | Qg |  | 21 | 27 | nC | VDS = 30V, ID = 100A | 3 |
| Gate charge total (10V) | Qg |  | 44 | 57 | nC |  | 3 |
| Diode forward voltage | VSD |  | 0.9 | 1 | V | ISD = 100A, VGS = 0V | 3 |
| Junction-to-case thermal resistance | RθJC |  |  | 0.6 | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `CSD18542KCS`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `csd18542kcs-etched.step` / `csd18542kcs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd18542kcs.step` / `csd18542kcs.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/csd18542kcs.pdf) (14 pp, sha256 `5b20cb96f6d065ed`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/csd18542kcs-datasheet.pdf)