component
CSD18542KCS
Public Made by Adomby adom
Texas Instruments MOSFETs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD18542KCS
Texas Instruments · MOSFETs · TO-220AB-3
CSD18542KCS from Texas Instruments, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet limits gate-to-source voltage to ±20 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal of the MOSFET; the datasheet rates drain-to-source voltage at 60 V and continuous drain current at 170 A (silicon limited) at TC = 25°C. |
| 3 | Source | passive | Source terminal of the MOSFET; the device operating and storage temperature range is −55 to 175 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220AB-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-source voltage | VDS | 60 | V | 1 | |||
| Gate-to-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (package limited) | ID | 200 | A | Package limited | 1 | ||
| Continuous drain current (silicon limited) | ID | 170 | A | Silicon limited, TC = 25°C | 1 | ||
| Continuous drain current (silicon limited) | ID | 120 | A | Silicon limited, TC = 100°C | 1 | ||
| Pulsed drain current | IDM | 400 | A | Pulse duration ≤100μs, duty cycle ≤1% | 1 | ||
| Power dissipation | PD | 200 | W | 1 | |||
| Operating junction and storage temperature | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Avalanche energy, single pulse | EAS | 281 | mJ | ID = 75A, L = 0.1mH, RG = 25Ω | 1 | ||
| Drain-to-source voltage | BVDSS | 60 | V | VGS = 0V, ID = 250μA | 3 | ||
| Drain-to-source leakage current | IDSS | 1 | μA | VGS = 0V, VDS = 48V | 3 | ||
| Gate-to-source leakage current | IGSS | 100 | nA | VDS = 0V, VGS = 20V | 3 | ||
| Gate-to-source threshold voltage | VGS(th) | 1.5 | 1.8 | 2.2 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-source on-resistance | RDS(on) | 4 | 5.1 | mΩ | VGS = 4.5V, ID = 100A | 3 | |
| Drain-to-source on-resistance | RDS(on) | 3.3 | 4 | mΩ | VGS = 10V, ID = 100A | 3 | |
| Input capacitance | Ciss | 3900 | 5070 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 | |
| Output capacitance | Coss | 570 | 740 | pF | 3 | ||
| Reverse transfer capacitance | Crss | 11 | 14 | pF | 3 | ||
| Series gate resistance | RG | 1.3 | 2.6 | Ω | 3 | ||
| Gate charge total (4.5V) | Qg | 21 | 27 | nC | VDS = 30V, ID = 100A | 3 | |
| Gate charge total (10V) | Qg | 44 | 57 | nC | 3 | ||
| Diode forward voltage | VSD | 0.9 | 1 | V | ISD = 100A, VGS = 0V | 3 | |
| Junction-to-case thermal resistance | RθJC | 0.6 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
CSD18542KCS - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
csd18542kcs-etched.step/csd18542kcs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd18542kcs.step/csd18542kcs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (14 pp, sha256
5b20cb96f6d065ed, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).