# CSD18511KCS

**Texas Instruments** · MOSFETs · TO-220

CSD18511KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with a gate-to-source voltage rating of ±20 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal, rated for 40 V drain-to-source voltage and 194 A continuous drain current at TC = 25°C (silicon limited, package limited at 110 A). |
| 3 | Source | passive | Source terminal, the reference for the gate-to-source voltage, with a body-diode forward voltage VSD of 0.9 V typical and 1.0 V maximum at ISD = 100 A and VGS = 0 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS |  |  | 40 | V | TA = 25°C | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V | TA = 25°C | 1 |
| Continuous Drain Current (Package Limited) | ID |  |  | 110 | A | Package limited | 1 |
| Continuous Drain Current (Silicon Limited) | ID |  |  | 194 | A | TC = 25°C | 1 |
| Continuous Drain Current (Silicon Limited) | ID |  |  | 137 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 400 | A | Pulse duration ≤ 100μs, duty cycle ≤ 1% | 1 |
| Power Dissipation | PD |  |  | 188 | W | TA = 25°C | 1 |
| Operating Junction, Storage Temperature | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Avalanche Energy, Single Pulse | EAS |  |  | 156 | mJ | ID = 56A, L = 0.1mH, RG = 25Ω | 1 |
| Drain-to-source voltage | BVDSS | 40 |  |  | V | VGS = 0V, ID = 250μA | 3 |
| Drain-to-source leakage current | IDSS |  |  | 1 | μA | VGS = 0V, VDS = 32V | 3 |
| Gate-to-source leakage current | IGSS |  |  | 100 | nA | VDS = 0V, VGS = 20V | 3 |
| Gate-to-source threshold voltage | VGS(th) | 1.5 | 1.8 | 2.4 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-source on-resistance | RDS(on) |  | 3.2 | 4.2 | mΩ | VGS = 4.5V, ID = 100A | 3 |
| Drain-to-source on-resistance | RDS(on) |  | 2.1 | 2.6 | mΩ | VGS = 10V, ID = 100A | 3 |
| Input capacitance | Ciss |  | 4570 | 5940 | pF | VGS = 0V, VDS = 20V, ƒ = 1MHz | 3 |
| Output capacitance | Coss |  | 454 | 591 | pF | VGS = 0V, VDS = 20V, ƒ = 1MHz | 3 |
| Reverse transfer capacitance | Crss |  | 235 | 306 | pF | VGS = 0V, VDS = 20V, ƒ = 1MHz | 3 |
| Series gate resistance | RG |  | 0.9 | 1.8 | Ω |  | 3 |
| Diode forward voltage | VSD |  | 0.9 | 1 | V | ISD = 100A, VGS = 0V | 3 |
| Junction-to-case thermal resistance | RθJC |  |  | 0.8 | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `CSD18511KCS`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `csd18511kcs-etched.step` / `csd18511kcs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd18511kcs.step` / `csd18511kcs.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/csd18511kcs.pdf) (13 pp, sha256 `305021f66278ae30`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/csd18511kcs-datasheet.pdf)