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CSD18511KCS

Texas Instruments · MOSFETs · TO-220

CSD18511KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with a gate-to-source voltage rating of ±20 V (absolute maximum).
2 Drain passive Drain terminal, rated for 40 V drain-to-source voltage and 194 A continuous drain current at TC = 25°C (silicon limited, package limited at 110 A).
3 Source passive Source terminal, the reference for the gate-to-source voltage, with a body-diode forward voltage VSD of 0.9 V typical and 1.0 V maximum at ISD = 100 A and VGS = 0 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 40 V TA = 25°C 1
Gate-to-Source Voltage VGS -20 20 V TA = 25°C 1
Continuous Drain Current (Package Limited) ID 110 A Package limited 1
Continuous Drain Current (Silicon Limited) ID 194 A TC = 25°C 1
Continuous Drain Current (Silicon Limited) ID 137 A TC = 100°C 1
Pulsed Drain Current IDM 400 A Pulse duration ≤ 100μs, duty cycle ≤ 1% 1
Power Dissipation PD 188 W TA = 25°C 1
Operating Junction, Storage Temperature TJ, Tstg -55 175 °C 1
Avalanche Energy, Single Pulse EAS 156 mJ ID = 56A, L = 0.1mH, RG = 25Ω 1
Drain-to-source voltage BVDSS 40 V VGS = 0V, ID = 250μA 3
Drain-to-source leakage current IDSS 1 μA VGS = 0V, VDS = 32V 3
Gate-to-source leakage current IGSS 100 nA VDS = 0V, VGS = 20V 3
Gate-to-source threshold voltage VGS(th) 1.5 1.8 2.4 V VDS = VGS, ID = 250μA 3
Drain-to-source on-resistance RDS(on) 3.2 4.2 mΩ VGS = 4.5V, ID = 100A 3
Drain-to-source on-resistance RDS(on) 2.1 2.6 mΩ VGS = 10V, ID = 100A 3
Input capacitance Ciss 4570 5940 pF VGS = 0V, VDS = 20V, ƒ = 1MHz 3
Output capacitance Coss 454 591 pF VGS = 0V, VDS = 20V, ƒ = 1MHz 3
Reverse transfer capacitance Crss 235 306 pF VGS = 0V, VDS = 20V, ƒ = 1MHz 3
Series gate resistance RG 0.9 1.8 Ω 3
Diode forward voltage VSD 0.9 1 V ISD = 100A, VGS = 0V 3
Junction-to-case thermal resistance RθJC 0.8 °C/W 3

CAD (KiCad official)

  • Symbol: CSD18511KCS
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: csd18511kcs-etched.step / csd18511kcs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); csd18511kcs.step / csd18511kcs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (13 pp, sha256 305021f66278ae30, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF