component
CS630A4H
Public Made by Adomby adom
Wuxi China Resources Huajing Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
CS630A4H
Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-252
CS630A4H from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage rated ±30 V, with VGS(TH) 2.0 to 4.0 V at VDS = VGS, ID = 250µA. |
| 2 | Drain | passive | Drain terminal (also the tab); drain-to-source voltage 200 V, continuous drain current 9 A, pulsed 36 A. |
| 3 | Source | passive | Source terminal; body-diode continuous source current up to 9 A and pulsed 36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDSS | 200 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current (Ta=25℃) | IDSS | 1 | µA | VDS = 200V, VGS= 0V, Ta = 25℃ | 2 | ||
| Drain-to-Source Leakage Current (Ta=125℃) | IDSS | 100 | µA | VDS =160V, VGS= 0V, Ta = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.23 | 0.28 | Ω | VGS=10V,ID=5.4A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | V | VDS = VGS, ID = 250µA | 2 | ||
| Continuous Source Current (Body Diode) | IS | 9 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 36 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=9A,VGS=0V | 3 | ||
| Drain-to-Source Voltage | VDSS | 200 | V | 1 | |||
| Continuous Drain Current | ID | 9 | A | 1 | |||
| Continuous Drain Current | ID | 5.5 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 460 | mJ | L=10.0mH, ID=9.6A, Start TJ=25℃ (footnote a2) | 1 | ||
| Avalanche Energy, Repetitive | EAR | 50 | mJ | Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) | 1 | ||
| Avalanche Current | IAR | 3.2 | A | Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD =9A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ (footnote a3) | 1 | ||
| Power Dissipation | PD | 83 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.51 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
CS630A4H - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cs630a4h-etched.step/cs630a4h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs630a4h.step/cs630a4h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256
247087499f426f56, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CS630A4H
**Wuxi China Resources Huajing Microelectronics** · MOSFETs · TO-252
CS630A4H from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage rated ±30 V, with VGS(TH) 2.0 to 4.0 V at VDS = VGS, ID = 250µA. |
| 2 | Drain | passive | Drain terminal (also the tab); drain-to-source voltage 200 V, continuous drain current 9 A, pulsed 36 A. |
| 3 | Source | passive | Source terminal; body-diode continuous source current up to 9 A and pulsed 36 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDSS | 200 | | | V | VGS=0V, ID=250µA | 2 |
| Drain-to-Source Leakage Current (Ta=25℃) | IDSS | | | 1 | µA | VDS = 200V, VGS= 0V, Ta = 25℃ | 2 |
| Drain-to-Source Leakage Current (Ta=125℃) | IDSS | | | 100 | µA | VDS =160V, VGS= 0V, Ta = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS =+30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | | | -100 | nA | VGS =-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 0.23 | 0.28 | Ω | VGS=10V,ID=5.4A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | | V | VDS = VGS, ID = 250µA | 2 |
| Continuous Source Current (Body Diode) | IS | | | 9 | A | | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 36 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.5 | V | IS=9A,VGS=0V | 3 |
| Drain-to-Source Voltage | VDSS | | | 200 | V | | 1 |
| Continuous Drain Current | ID | | | 9 | A | | 1 |
| Continuous Drain Current | ID | | | 5.5 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 36 | A | | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 460 | mJ | L=10.0mH, ID=9.6A, Start TJ=25℃ (footnote a2) | 1 |
| Avalanche Energy, Repetitive | EAR | | | 50 | mJ | Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) | 1 |
| Avalanche Current | IAR | | | 3.2 | A | Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | ISD =9A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ (footnote a3) | 1 |
| Power Dissipation | PD | | | 83 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | 1.51 | | ℃/W | | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 62.5 | | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `CS630A4H`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `cs630a4h-etched.step` / `cs630a4h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cs630a4h.step` / `cs630a4h.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi China Resources Huajing Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588899929846243328) (10 pp, sha256 `247087499f426f56`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cs630a4h-datasheet.pdf)