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CS630A4H

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Wuxi China Resources Huajing Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CS630A4H

Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-252

CS630A4H from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-to-source voltage rated ±30 V, with VGS(TH) 2.0 to 4.0 V at VDS = VGS, ID = 250µA.
2 Drain passive Drain terminal (also the tab); drain-to-source voltage 200 V, continuous drain current 9 A, pulsed 36 A.
3 Source passive Source terminal; body-diode continuous source current up to 9 A and pulsed 36 A.

Key specifications

Parameter Value
Manufacturer Wuxi China Resources Huajing Microelectronics
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage VDSS 200 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current (Ta=25℃) IDSS 1 µA VDS = 200V, VGS= 0V, Ta = 25℃ 2
Drain-to-Source Leakage Current (Ta=125℃) IDSS 100 µA VDS =160V, VGS= 0V, Ta = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 0.23 0.28 Ω VGS=10V,ID=5.4A 2
Gate Threshold Voltage VGS(TH) 2 V VDS = VGS, ID = 250µA 2
Continuous Source Current (Body Diode) IS 9 A 3
Maximum Pulsed Current (Body Diode) ISM 36 A 3
Diode Forward Voltage VSD 1.5 V IS=9A,VGS=0V 3
Drain-to-Source Voltage VDSS 200 V 1
Continuous Drain Current ID 9 A 1
Continuous Drain Current ID 5.5 A TC = 100 °C 1
Pulsed Drain Current IDM 36 A 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 460 mJ L=10.0mH, ID=9.6A, Start TJ=25℃ (footnote a2) 1
Avalanche Energy, Repetitive EAR 50 mJ Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) 1
Avalanche Current IAR 3.2 A Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD =9A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ (footnote a3) 1
Power Dissipation PD 83 W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Junction-to-Case Thermal Resistance RθJC 1.51 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W 3

CAD (KiCad official)

  • Symbol: CS630A4H
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cs630a4h-etched.step / cs630a4h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs630a4h.step / cs630a4h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256 247087499f426f56, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF