# CS5N65FA9R

**Wuxi China Resources Huajing Microelectronics** · MOSFETs · TO-220F

CS5N65FA9R from Wuxi China Resources Huajing Microelectronics, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage is limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA, and gate leakage is max 100 nA at VGS=±30 V. |
| 2 | Drain | passive | Drain terminal; drain-to-source voltage rating is 650 V with continuous drain current of 5 A (3.1 A at TC=100 °C) and pulsed 20 A. |
| 3 | Source | passive | Source terminal connected to the body diode anode; continuous source current 5 A and pulsed 20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 5 | A |  | 1 |
| Continuous Drain Current | ID |  |  | 3.1 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A |  | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 200 | mJ | L=10mH, ID=6.3A, Start TJ=25℃ | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD=5A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 |
| Power Dissipation | PD |  |  | 30 | W |  | 1 |
| Derating Factor above 25°C |  |  |  | 0.24 | W/℃ | above 25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 300 | ℃ |  | 1 |
| Drain to Source Breakdown Voltage | VDSS | 650 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | µA | VDS =650V, VGS= 0V, Ta = 25℃ | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 100 | µA | VDS =520V, VGS= 0V, Ta = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS =+30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS =-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) |  | 2.4 | 2.8 | Ω | VGS=10V,ID=2A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 5 | A |  | 3 |
| Maximum Pulsed Current (Body Diode) | ISM |  |  | 20 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=5.0A,VGS=0V | 3 |
| Junction-to-Case | RθJC |  | 4.17 |  | ℃/W |  | 3 |
| Junction-to-Ambient | RθJA |  | 62.5 |  | ℃/W |  | 3 |

## CAD (KiCad official)

- Symbol: `CS5N65FA9R`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi China Resources Huajing Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588889832697708544) (10 pp, sha256 `8d186ece56c0d1c8`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cs5n65fa9r-datasheet.pdf)