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Contents

README

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CS5N65FA9R

Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-220F

CS5N65FA9R from Wuxi China Resources Huajing Microelectronics, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-to-source voltage is limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA, and gate leakage is max 100 nA at VGS=±30 V.
2 Drain passive Drain terminal; drain-to-source voltage rating is 650 V with continuous drain current of 5 A (3.1 A at TC=100 °C) and pulsed 20 A.
3 Source passive Source terminal connected to the body diode anode; continuous source current 5 A and pulsed 20 A.

Key specifications

Parameter Value
Manufacturer Wuxi China Resources Huajing Microelectronics
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Continuous Drain Current ID 5 A 1
Continuous Drain Current ID 3.1 A TC = 100 °C 1
Pulsed Drain Current IDM 20 A 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 200 mJ L=10mH, ID=6.3A, Start TJ=25℃ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=5A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Power Dissipation PD 30 W 1
Derating Factor above 25°C 0.24 W/℃ above 25°C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Drain to Source Breakdown Voltage VDSS 650 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS =650V, VGS= 0V, Ta = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =520V, VGS= 0V, Ta = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 2.4 2.8 Ω VGS=10V,ID=2A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Continuous Source Current (Body Diode) IS 5 A 3
Maximum Pulsed Current (Body Diode) ISM 20 A 3
Diode Forward Voltage VSD 1.5 V IS=5.0A,VGS=0V 3
Junction-to-Case RθJC 4.17 ℃/W 3
Junction-to-Ambient RθJA 62.5 ℃/W 3

CAD (KiCad official)

  • Symbol: CS5N65FA9R
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256 8d186ece56c0d1c8, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF