component
CS5N65FA9R
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Wuxi China Resources Huajing Microelectronics MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCS5N65FA9R
Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-220F
CS5N65FA9R from Wuxi China Resources Huajing Microelectronics, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage is limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA, and gate leakage is max 100 nA at VGS=±30 V. |
| 2 | Drain | passive | Drain terminal; drain-to-source voltage rating is 650 V with continuous drain current of 5 A (3.1 A at TC=100 °C) and pulsed 20 A. |
| 3 | Source | passive | Source terminal connected to the body diode anode; continuous source current 5 A and pulsed 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Continuous Drain Current | ID | 5 | A | 1 | |||
| Continuous Drain Current | ID | 3.1 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | L=10mH, ID=6.3A, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD=5A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 30 | W | 1 | |||
| Derating Factor above 25°C | 0.24 | W/℃ | above 25°C | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Drain to Source Breakdown Voltage | VDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =650V, VGS= 0V, Ta = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =520V, VGS= 0V, Ta = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 2.4 | 2.8 | Ω | VGS=10V,ID=2A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Continuous Source Current (Body Diode) | IS | 5 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 20 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=5.0A,VGS=0V | 3 | ||
| Junction-to-Case | RθJC | 4.17 | ℃/W | 3 | |||
| Junction-to-Ambient | RθJA | 62.5 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
CS5N65FA9R - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256
8d186ece56c0d1c8, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).