component

CS5N65A5

Public Made by Adom

by adom

SEP MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorscs5n65a5factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
cs5n65a5 / README.md
History Download
Ray Publish 0.1.0 124edbf 17d ago

CS5N65A5

SEP · MOSFETs · TO-252

CS5N65A5 from SEP, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±30 V with threshold VGS(th) of 2 to 4 V at VDS = VGS, ID = 250 µA.
2 D passive Drain (also the mounting tab); drain-source voltage 650 V, continuous drain current 5 A, pulsed 20 A.
3 S passive Source; maximum body-diode continuous current 5 A, pulsed 20 A.

Key specifications

Parameter Value
Manufacturer SEP
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 2
Gate-Source Voltage VGS -30 30 V 2
Continuous Drain Current ID 5 A 2
Pulsed Drain Current IDM 20 A Pulse test: 300 µs pulse width, 2 % duty cycle (Note1) 2
Power Dissipation (TO-251/252 column) PD 85 W 2
Single Pulse Avalanche Energy EAS 150 mJ Pulse test: 300 µs pulse width, 2 % duty cycle (Note1) 2
Operating Temperature Range TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance, Junction to Case (TO-251/252 column) RθJC 1.67 °C/W 2
Thermal Resistance, Junction to Ambient (TO-251/252 column) RθJA 62.5 °C/W 2
Drain-Source Breakdown Voltage BVDSS 650 680 V VGS = 0 V, ID = 250 µA 2
Drain-Source Leakage Current IDSS 1 µA VDS = 650 V, VGS = 0 V 2
Gate Leakage Current IGSS -100 100 nA VGS = ± 30 V, VDS = 0 V 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Drain-Source On-State Resistance RDS(on) 2 2.4 Ω VGS = 10 V, ID = 2 A 2
Maximum Body-Diode Continuous Current IS 5 A 2
Maximum Body-Diode Pulsed Current ISM 20 A Pulse test: 300 µs pulse width, 2 % duty cycle (Note2) 2
Drain-Source Diode Forward Voltage VSD 1.5 V ISD = 4 A 2

CAD (KiCad official)

  • Symbol: CS5N65A5
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cs5n65a5-etched.step / cs5n65a5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs5n65a5.step / cs5n65a5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SEP datasheet (4 pp, sha256 9dc710970006a0a3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF