component
CS5N65A5
Public Made by Adomby adom
SEP MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| cs5n65a5-etched.glb | 17d ago |
| cs5n65a5-etched.step | 17d ago |
| cs5n65a5-hero.glb | 17d ago |
| cs5n65a5-hero.overlay.json | 17d ago |
| cs5n65a5.glb | 17d ago |
| cs5n65a5.kicad_mod | 17d ago |
| cs5n65a5.kicad_sym | 17d ago |
| cs5n65a5.lbr | 17d ago |
| cs5n65a5.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
CS5N65A5
SEP · MOSFETs · TO-252
CS5N65A5 from SEP, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±30 V with threshold VGS(th) of 2 to 4 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain (also the mounting tab); drain-source voltage 650 V, continuous drain current 5 A, pulsed 20 A. |
| 3 | S | passive | Source; maximum body-diode continuous current 5 A, pulsed 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SEP |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 2 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Continuous Drain Current | ID | 5 | A | 2 | |||
| Pulsed Drain Current | IDM | 20 | A | Pulse test: 300 µs pulse width, 2 % duty cycle (Note1) | 2 | ||
| Power Dissipation (TO-251/252 column) | PD | 85 | W | 2 | |||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | Pulse test: 300 µs pulse width, 2 % duty cycle (Note1) | 2 | ||
| Operating Temperature Range | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Case (TO-251/252 column) | RθJC | 1.67 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient (TO-251/252 column) | RθJA | 62.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | 680 | V | VGS = 0 V, ID = 250 µA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ± 30 V, VDS = 0 V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 2 | 2.4 | Ω | VGS = 10 V, ID = 2 A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 5 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 20 | A | Pulse test: 300 µs pulse width, 2 % duty cycle (Note2) | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | ISD = 4 A | 2 |
CAD (KiCad official)
- Symbol:
CS5N65A5 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cs5n65a5-etched.step/cs5n65a5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs5n65a5.step/cs5n65a5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SEP datasheet (4 pp, sha256
9dc710970006a0a3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).