# CS5N20A4

**Wuxi China Resources Huajing Microelectronics** · MOSFETs · TO-252

CS5N20A4 from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±30 V, with a gate threshold voltage of 2.0 to 4.0 V at VDS = VGS, ID = 250µA. |
| 2 | D | passive | Drain (also the tab); drain-to-source voltage is rated 200 V, with continuous drain current of 4.8 A at TC = 25 °C. |
| 3 | S | passive | Source; body diode continuous source current is 4.8 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 200 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 4.8 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.4 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 19.2 | A | TC = 25 °C | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 125 | mJ |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns |  | 1 |
| Power Dissipation | PD |  |  | 40 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ，Tstg | -55 |  | 150 | ℃ |  | 1 |
| Drain to Source Breakdown Voltage | VDSS | 200 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current (TJ = 25℃) | IDSS |  |  | 1 | µA | VDS = 200V, VGS= 0V, TJ = 25℃ | 2 |
| Drain to Source Leakage Current (TJ = 125℃) | IDSS |  |  | 10 | µA | VDS =160V, VGS= 0V, TJ = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS= 30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS =-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) |  | 0.49 | 0.65 | Ω | VGS=10V,ID=2.9A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 |  | V | VDS = VGS, ID = 250µA | 2 |
| Forward Trans conductance | gfs | 2 |  |  | S | VDS=15V, ID =2.9A | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 4.8 | A | TC = 25 °C | 3 |
| Maximum Pulsed Current (Body Diode) | ISM |  |  | 19.2 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=1.8A,VGS=0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 3.13 | ℃/W | Junction-to-Case | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 62.5 | ℃/W | Junction-to-Ambient | 3 |

## CAD (KiCad official)

- Symbol: `CS5N20A4`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `cs5n20a4-etched.step` / `cs5n20a4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cs5n20a4.step` / `cs5n20a4.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi China Resources Huajing Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911505374367744) (10 pp, sha256 `bab655a77ffd9f5b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cs5n20a4-datasheet.pdf)