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CS5N20A4

Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-252

CS5N20A4 from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated ±30 V, with a gate threshold voltage of 2.0 to 4.0 V at VDS = VGS, ID = 250µA.
2 D passive Drain (also the tab); drain-to-source voltage is rated 200 V, with continuous drain current of 4.8 A at TC = 25 °C.
3 S passive Source; body diode continuous source current is 4.8 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Wuxi China Resources Huajing Microelectronics
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 200 V 1
Continuous Drain Current ID 4.8 A TC = 25 °C 1
Continuous Drain Current ID 3.4 A TC = 100 °C 1
Pulsed Drain Current IDM 19.2 A TC = 25 °C 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 125 mJ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Power Dissipation PD 40 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Drain to Source Breakdown Voltage VDSS 200 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current (TJ = 25℃) IDSS 1 µA VDS = 200V, VGS= 0V, TJ = 25℃ 2
Drain to Source Leakage Current (TJ = 125℃) IDSS 10 µA VDS =160V, VGS= 0V, TJ = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS= 30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 0.49 0.65 Ω VGS=10V,ID=2.9A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Forward Trans conductance gfs 2 S VDS=15V, ID =2.9A 2
Continuous Source Current (Body Diode) IS 4.8 A TC = 25 °C 3
Maximum Pulsed Current (Body Diode) ISM 19.2 A 3
Diode Forward Voltage VSD 1.5 V IS=1.8A,VGS=0V 3
Junction-to-Case Thermal Resistance RθJC 3.13 ℃/W Junction-to-Case 3
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W Junction-to-Ambient 3

CAD (KiCad official)

  • Symbol: CS5N20A4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cs5n20a4-etched.step / cs5n20a4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs5n20a4.step / cs5n20a4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256 bab655a77ffd9f5b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF