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CS4N80A4HD-G
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Wuxi China Resources Huajing Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CS4N80A4HD-G
Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-252
CS4N80A4HD-G from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V, threshold 2.0 to 4.0 V at VDS=VGS, ID=250µA, with 4000 V HBM ESD capability. |
| 2 | D | passive | Drain (also the tab); drain-to-source voltage 800 V, continuous drain current 4 A, pulsed 16 A. |
| 3 | S | passive | Source; body diode continuous current 4 A, pulsed 16 A, forward voltage max 1.5 V at IS=4.0A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | 800 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 25 | µA | VDS=800V, VGS=0V, Ta=25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 250 | µA | VDS=640V, VGS=0V, Ta=125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 10 | µA | VGS=+20V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -10 | µA | VGS=-20V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 2.2 | 2.8 | Ω | VGS=10V, ID=2A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 2 | |
| Diode Forward Voltage | VSD | 1.5 | V | IS=4.0A, VGS=0V | 3 | ||
| Continuous Source Current (Body Diode) | IS | 4 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 16 | A | 3 | |||
| Drain-to-Source Voltage | VDSS | 800 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 4 | A | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 2.5 | A | TC=100 °C | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 230 | mJ | L=10mH, ID=6.8A, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 100 | W | Tc=25℃ | 1 | ||
| Gate source ESD | VESD(G-S) | 4000 | V | HBM-C=100pF, R=1.5kΩ | 1 | ||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.25 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | ℃/W | 3 | |||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.9 | V/℃ | ID=250uA, Reference 25℃ | 2 | ||
| Forward Transconductance | gfs | 5.5 | S | VDS=15V, ID=2A | 2 | ||
| Input Capacitance | Ciss | 865 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 82 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 7.5 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 18 | ns | ID=4A, VDD=400V, RG=10Ω | 2 | ||
| Rise Time | tr | 16 | ns | ID=4A, VDD=400V, RG=10Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 45 | ns | ID=4A, VDD=400V, RG=10Ω | 2 | ||
| Fall Time | tf | 14 | ns | ID=4A, VDD=400V, RG=10Ω | 2 | ||
| Total Gate Charge | Qg | 25 | nC | ID=4A, VDD=640V, VGS=10V | 2 | ||
| Gate to Source Charge | Qgs | 4 | nC | ID=4A, VDD=640V, VGS=10V | 2 | ||
| Gate to Drain Charge | Qgd | 11.5 | nC | ID=4A, VDD=640V, VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 274 | ns | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 1150 | nC | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Current | IRRM | 8.4 | A | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
CS4N80A4HD-G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cs4n80a4hd-g-etched.step/cs4n80a4hd-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs4n80a4hd-g.step/cs4n80a4hd-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256
6e9387640ac8a56b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CS4N80A4HD-G
**Wuxi China Resources Huajing Microelectronics** · MOSFETs · TO-252
CS4N80A4HD-G from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V, threshold 2.0 to 4.0 V at VDS=VGS, ID=250µA, with 4000 V HBM ESD capability. |
| 2 | D | passive | Drain (also the tab); drain-to-source voltage 800 V, continuous drain current 4 A, pulsed 16 A. |
| 3 | S | passive | Source; body diode continuous current 4 A, pulsed 16 A, forward voltage max 1.5 V at IS=4.0A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | 800 | | | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | 25 | µA | VDS=800V, VGS=0V, Ta=25℃ | 2 |
| Drain to Source Leakage Current | IDSS | | | 250 | µA | VDS=640V, VGS=0V, Ta=125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 10 | µA | VGS=+20V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | -10 | | | µA | VGS=-20V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 2.2 | 2.8 | Ω | VGS=10V, ID=2A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250µA | 2 |
| Diode Forward Voltage | VSD | | | 1.5 | V | IS=4.0A, VGS=0V | 3 |
| Continuous Source Current (Body Diode) | IS | | | 4 | A | | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 16 | A | | 3 |
| Drain-to-Source Voltage | VDSS | | | 800 | V | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 4 | A | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 2.5 | A | TC=100 °C | 1 |
| Pulsed Drain Current | IDM | | | 16 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 230 | mJ | L=10mH, ID=6.8A, Start TJ=25℃ | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 |
| Power Dissipation | PD | | | 100 | W | Tc=25℃ | 1 |
| Gate source ESD | VESD(G-S) | | | 4000 | V | HBM-C=100pF, R=1.5kΩ | 1 |
| Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 1.25 | ℃/W | | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 100 | ℃/W | | 3 |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.9 | | V/℃ | ID=250uA, Reference 25℃ | 2 |
| Forward Transconductance | gfs | | 5.5 | | S | VDS=15V, ID=2A | 2 |
| Input Capacitance | Ciss | | 865 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 82 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 7.5 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Turn-on Delay Time | td(ON) | | 18 | | ns | ID=4A, VDD=400V, RG=10Ω | 2 |
| Rise Time | tr | | 16 | | ns | ID=4A, VDD=400V, RG=10Ω | 2 |
| Turn-Off Delay Time | td(OFF) | | 45 | | ns | ID=4A, VDD=400V, RG=10Ω | 2 |
| Fall Time | tf | | 14 | | ns | ID=4A, VDD=400V, RG=10Ω | 2 |
| Total Gate Charge | Qg | | 25 | | nC | ID=4A, VDD=640V, VGS=10V | 2 |
| Gate to Source Charge | Qgs | | 4 | | nC | ID=4A, VDD=640V, VGS=10V | 2 |
| Gate to Drain Charge | Qgd | | 11.5 | | nC | ID=4A, VDD=640V, VGS=10V | 2 |
| Reverse Recovery Time | trr | | 274 | | ns | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Charge | Qrr | | 1150 | | nC | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Current | IRRM | | 8.4 | | A | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
## CAD (KiCad official)
- Symbol: `CS4N80A4HD-G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `cs4n80a4hd-g-etched.step` / `cs4n80a4hd-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cs4n80a4hd-g.step` / `cs4n80a4hd-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi China Resources Huajing Microelectronics datasheet](docs/cs4n80a4hd-g-datasheet.pdf) (10 pp, sha256 `6e9387640ac8a56b`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cs4n80a4hd-g-datasheet.pdf)