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CS4N80A4HD-G

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Wuxi China Resources Huajing Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CS4N80A4HD-G

Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-252

CS4N80A4HD-G from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rated ±30 V, threshold 2.0 to 4.0 V at VDS=VGS, ID=250µA, with 4000 V HBM ESD capability.
2 D passive Drain (also the tab); drain-to-source voltage 800 V, continuous drain current 4 A, pulsed 16 A.
3 S passive Source; body diode continuous current 4 A, pulsed 16 A, forward voltage max 1.5 V at IS=4.0A.

Key specifications

Parameter Value
Manufacturer Wuxi China Resources Huajing Microelectronics
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage VDSS 800 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 25 µA VDS=800V, VGS=0V, Ta=25℃ 2
Drain to Source Leakage Current IDSS 250 µA VDS=640V, VGS=0V, Ta=125℃ 2
Gate to Source Forward Leakage IGSS(F) 10 µA VGS=+20V 2
Gate to Source Reverse Leakage IGSS(R) -10 µA VGS=-20V 2
Drain-to-Source On-Resistance RDS(ON) 2.2 2.8 Ω VGS=10V, ID=2A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA 2
Diode Forward Voltage VSD 1.5 V IS=4.0A, VGS=0V 3
Continuous Source Current (Body Diode) IS 4 A 3
Maximum Pulsed Current (Body Diode) ISM 16 A 3
Drain-to-Source Voltage VDSS 800 V Tc=25℃ 1
Continuous Drain Current ID 4 A Tc=25℃ 1
Continuous Drain Current ID 2.5 A TC=100 °C 1
Pulsed Drain Current IDM 16 A Repetitive rating; pulse width limited by maximum junction temperature 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 230 mJ L=10mH, ID=6.8A, Start TJ=25℃ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Power Dissipation PD 100 W Tc=25℃ 1
Gate source ESD VESD(G-S) 4000 V HBM-C=100pF, R=1.5kΩ 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Junction-to-Case Thermal Resistance RθJC 1.25 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 100 ℃/W 3
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.9 V/℃ ID=250uA, Reference 25℃ 2
Forward Transconductance gfs 5.5 S VDS=15V, ID=2A 2
Input Capacitance Ciss 865 pF VGS=0V, VDS=25V, f=1.0MHz 2
Output Capacitance Coss 82 pF VGS=0V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 7.5 pF VGS=0V, VDS=25V, f=1.0MHz 2
Turn-on Delay Time td(ON) 18 ns ID=4A, VDD=400V, RG=10Ω 2
Rise Time tr 16 ns ID=4A, VDD=400V, RG=10Ω 2
Turn-Off Delay Time td(OFF) 45 ns ID=4A, VDD=400V, RG=10Ω 2
Fall Time tf 14 ns ID=4A, VDD=400V, RG=10Ω 2
Total Gate Charge Qg 25 nC ID=4A, VDD=640V, VGS=10V 2
Gate to Source Charge Qgs 4 nC ID=4A, VDD=640V, VGS=10V 2
Gate to Drain Charge Qgd 11.5 nC ID=4A, VDD=640V, VGS=10V 2
Reverse Recovery Time trr 274 ns IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 1150 nC IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Current IRRM 8.4 A IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V 3

CAD (KiCad official)

  • Symbol: CS4N80A4HD-G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cs4n80a4hd-g-etched.step / cs4n80a4hd-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs4n80a4hd-g.step / cs4n80a4hd-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256 6e9387640ac8a56b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF