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Generated by kicad-footprint-generator · KiCad file format 20260206

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CS25N06C4

Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-252-2

CS25N06C4 from Wuxi China Resources Huajing Microelectronics, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-to-source voltage rated ±20 V, with threshold VGS(TH) 1.0 to 2.0 V at VDS=VGS, ID=250µA.
2	D	passive	Drain (also the tab); drain-to-source voltage 60 V, continuous drain current 25 A at TC=25 °C.
3	S	passive	Source; body diode continuous source current 25 A at TC=25 °C.

Key specifications

Parameter	Value
Manufacturer	Wuxi China Resources Huajing Microelectronics
Package	TO-252-2
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-to-Source Voltage	VDSS			60	V		1
Continuous Drain Current	ID			25	A	TC= 25 °C	1
Continuous Drain Current	ID			17.5	A	TC = 100 °C	1
Pulsed Drain Current	IDM			100	A	TC= 25 °C	1
Gate-to-Source Voltage	VGS	-20		20	V		1
Avalanche Energy	EAS			56.2	mJ	L=0.5mH,VDD=30V,Ias=15A Start TJ=25℃	1
Power Dissipation	PD			36.2	W	TC = 25 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	℃		1
Drain to Source Breakdown Voltage	VDSS	60			V	VGS=0V, ID=250µA	2
Drain to Source Leakage Current	IDSS			1	µA	VDS =60V, VGS= 0V, Tj = 25℃	2
Drain to Source Leakage Current	IDSS			100	µA	VDS =48V, VGS= 0V, Tj = 125℃	2
Gate to Source Forward Leakage	IGSS(F)			100	nA	VGS=20V	2
Gate to Source Reverse Leakage	IGSS(R)			-100	nA	VGS =-20V	2
Drain-to-Source On-Resistance	RDS(ON)		23	29	mΩ	VGS=10V,ID=19A	2
Drain-to-Source On-Resistance	RDS(ON)		30	38	mΩ	VGS=4.5V,ID=19A	2
Gate Threshold Voltage	VGS(TH)	1	1.5	2	V	VDS = VGS, ID = 250µA	2
Continuous Source Current (Body Diode)	IS			25	A	TC= 25℃	3
Maximum Pulsed Current (Body Diode)	ISM			100	A		3
Diode Forward Voltage	VSD			1.2	V	IS=20A,VGS=0V	3
Junction-to-Case Thermal Resistance	RθJC			3.45	℃/W		3
Junction-to-Ambient Thermal Resistance	RθJA			111.5	℃/W		3

CAD (KiCad official)

Symbol: CS25N06C4
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252-2 (KiCad packages3D, STEP)
3D model files: cs25n06c4-etched.step / cs25n06c4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs25n06c4.step / cs25n06c4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256 9483d873c88c8880, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF