component
CRTT360N20N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CRTT360N20N
CRMICRO · MOSFETs · TO-220-3L
CRTT360N20N from CRMICRO, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet's top view shows it as the left-most lead, with a gate-source voltage limit of ±25 V. |
| 2 | D | passive | Drain; the middle lead, which is also connected to the metal tab. Drain-source voltage is rated at 200 V and continuous drain current at 50 A (silicon limit, TC = 25°C). |
| 3 | S | passive | Source; the right-most lead in the top view. It is the return for the 50 A continuous body-diode forward current (IS) at TC = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 200 | V | 1 | |||
| Gate-source voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous drain current (Silicon limit) | ID | 120 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (Package limit) | ID | 50 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (Silicon limit) | ID | 32 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 200 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Power dissipation | Ptot | 236 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Avalanche energy, single pulse | EAS | 72 | mJ | L=0.5mH, Rg=25Ω | 1 | ||
| Soldering temperature, wave soldering only allowed at leads | Tsold | 260 | °C | 1.6mm from case for 10s | 1 | ||
| Thermal resistance, junction to case | RthJC | 0.53 | °C/W | 2 | |||
| Thermal resistance, junction to ambient | RthJA | 84 | °C/W | min. footprint | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain-source breakdown voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 2 | ||
| Zero gate voltage drain current | IDSS | 0.05 | 1 | µA | VDS=200V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 100 | µA | VDS=200V, VGS=0V, Tj=150°C | 2 | ||
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Drain-source on-state resistance | RDS(on) | 30 | 36 | mΩ | VGS=10V, ID=30A, Tj=25°C | 2 | |
| Drain-source on-state resistance | RDS(on) | 77 | 93 | mΩ | VGS=10V, ID=30A, Tj=150°C | 2 | |
| Body diode continuous forward current | IS | 50 | A | TC = 25°C | 3 | ||
| Body diode forward voltage | VSD | 0.8 | 1.3 | V | VGS=0V, ISD=30A | 3 | |
| Transconductance | gfs | 74 | S | VDS=10V, ID=30A | 2 | ||
| Input capacitance | Ciss | 2575 | pF | VGS=0V, VDS=100V, f=1MHz | 2 | ||
| Output capacitance | Coss | 176 | pF | VGS=0V, VDS=100V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 47 | pF | VGS=0V, VDS=100V, f=1MHz | 2 | ||
| Gate total charge | QG | 54 | nC | VGS=10V, VDS=100V, ID=30A, f=1MHz | 2 | ||
| Gate resistance | RG | 1.8 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Body diode reverse recovery time | trr | 103 | ns | IF=30A, dI/dt=100A/µs | 3 | ||
| Body diode reverse recovery charge | Qrr | 519 | nC | 3 |
CAD (KiCad official)
- Symbol:
CRTT360N20N - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
crtt360n20n-etched.step/crtt360n20n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crtt360n20n.step/crtt360n20n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (9 pp, sha256
f0464295db56a699, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CRTT360N20N
**CRMICRO** · MOSFETs · TO-220-3L
CRTT360N20N from CRMICRO, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet's top view shows it as the left-most lead, with a gate-source voltage limit of ±25 V. |
| 2 | D | passive | Drain; the middle lead, which is also connected to the metal tab. Drain-source voltage is rated at 200 V and continuous drain current at 50 A (silicon limit, TC = 25°C). |
| 3 | S | passive | Source; the right-most lead in the top view. It is the return for the 50 A continuous body-diode forward current (IS) at TC = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 200 | V | | 1 |
| Gate-source voltage | VGS | -25 | | 25 | V | | 1 |
| Continuous drain current (Silicon limit) | ID | | | 120 | A | TC = 25°C (Silicon limit) | 1 |
| Continuous drain current (Package limit) | ID | | | 50 | A | TC = 25°C (Package limit) | 1 |
| Continuous drain current (Silicon limit) | ID | | | 32 | A | TC = 100°C (Silicon limit) | 1 |
| Pulsed drain current | ID pulse | | | 200 | A | TC = 25°C, tp limited by Tjmax | 1 |
| Power dissipation | Ptot | | | 236 | W | TC = 25°C | 1 |
| Operating junction and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Avalanche energy, single pulse | EAS | | | 72 | mJ | L=0.5mH, Rg=25Ω | 1 |
| Soldering temperature, wave soldering only allowed at leads | Tsold | | | 260 | °C | 1.6mm from case for 10s | 1 |
| Thermal resistance, junction to case | RthJC | | | 0.53 | °C/W | | 2 |
| Thermal resistance, junction to ambient | RthJA | | | 84 | °C/W | min. footprint | 2 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain-source breakdown voltage | BVDSS | 200 | | | V | VGS=0V, ID=250uA | 2 |
| Zero gate voltage drain current | IDSS | | 0.05 | 1 | µA | VDS=200V, VGS=0V, Tj=25°C | 2 |
| Zero gate voltage drain current | IDSS | | | 100 | µA | VDS=200V, VGS=0V, Tj=150°C | 2 |
| Gate-source leakage current | IGSS | | 10 | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) | | 30 | 36 | mΩ | VGS=10V, ID=30A, Tj=25°C | 2 |
| Drain-source on-state resistance | RDS(on) | | 77 | 93 | mΩ | VGS=10V, ID=30A, Tj=150°C | 2 |
| Body diode continuous forward current | IS | | | 50 | A | TC = 25°C | 3 |
| Body diode forward voltage | VSD | | 0.8 | 1.3 | V | VGS=0V, ISD=30A | 3 |
| Transconductance | gfs | | 74 | | S | VDS=10V, ID=30A | 2 |
| Input capacitance | Ciss | | 2575 | | pF | VGS=0V, VDS=100V, f=1MHz | 2 |
| Output capacitance | Coss | | 176 | | pF | VGS=0V, VDS=100V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss | | 47 | | pF | VGS=0V, VDS=100V, f=1MHz | 2 |
| Gate total charge | QG | | 54 | | nC | VGS=10V, VDS=100V, ID=30A, f=1MHz | 2 |
| Gate resistance | RG | | 1.8 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Body diode reverse recovery time | trr | | 103 | | ns | IF=30A, dI/dt=100A/µs | 3 |
| Body diode reverse recovery charge | Qrr | | 519 | | nC | | 3 |
## CAD (KiCad official)
- Symbol: `CRTT360N20N`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files: `crtt360n20n-etched.step` / `crtt360n20n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `crtt360n20n.step` / `crtt360n20n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CRMICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603109931817967617) (9 pp, sha256 `f0464295db56a699`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/crtt360n20n-datasheet.pdf)