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CRTT360N20N

Public Made by Adom

by adom

CRMICRO MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CRTT360N20N

CRMICRO · MOSFETs · TO-220-3L

CRTT360N20N from CRMICRO, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the datasheet's top view shows it as the left-most lead, with a gate-source voltage limit of ±25 V.
2 D passive Drain; the middle lead, which is also connected to the metal tab. Drain-source voltage is rated at 200 V and continuous drain current at 50 A (silicon limit, TC = 25°C).
3 S passive Source; the right-most lead in the top view. It is the return for the 50 A continuous body-diode forward current (IS) at TC = 25°C.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 200 V 1
Gate-source voltage VGS -25 25 V 1
Continuous drain current (Silicon limit) ID 120 A TC = 25°C (Silicon limit) 1
Continuous drain current (Package limit) ID 50 A TC = 25°C (Package limit) 1
Continuous drain current (Silicon limit) ID 32 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 200 A TC = 25°C, tp limited by Tjmax 1
Power dissipation Ptot 236 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Avalanche energy, single pulse EAS 72 mJ L=0.5mH, Rg=25Ω 1
Soldering temperature, wave soldering only allowed at leads Tsold 260 °C 1.6mm from case for 10s 1
Thermal resistance, junction to case RthJC 0.53 °C/W 2
Thermal resistance, junction to ambient RthJA 84 °C/W min. footprint 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=250uA 2
Drain-source breakdown voltage BVDSS 200 V VGS=0V, ID=250uA 2
Zero gate voltage drain current IDSS 0.05 1 µA VDS=200V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 100 µA VDS=200V, VGS=0V, Tj=150°C 2
Gate-source leakage current IGSS 10 100 nA VGS=±25V, VDS=0V 2
Drain-source on-state resistance RDS(on) 30 36 mΩ VGS=10V, ID=30A, Tj=25°C 2
Drain-source on-state resistance RDS(on) 77 93 mΩ VGS=10V, ID=30A, Tj=150°C 2
Body diode continuous forward current IS 50 A TC = 25°C 3
Body diode forward voltage VSD 0.8 1.3 V VGS=0V, ISD=30A 3
Transconductance gfs 74 S VDS=10V, ID=30A 2
Input capacitance Ciss 2575 pF VGS=0V, VDS=100V, f=1MHz 2
Output capacitance Coss 176 pF VGS=0V, VDS=100V, f=1MHz 2
Reverse transfer capacitance Crss 47 pF VGS=0V, VDS=100V, f=1MHz 2
Gate total charge QG 54 nC VGS=10V, VDS=100V, ID=30A, f=1MHz 2
Gate resistance RG 1.8 Ω VGS=0V, VDS=0V, f=1MHz 2
Body diode reverse recovery time trr 103 ns IF=30A, dI/dt=100A/µs 3
Body diode reverse recovery charge Qrr 519 nC 3

CAD (KiCad official)

  • Symbol: CRTT360N20N
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: crtt360n20n-etched.step / crtt360n20n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crtt360n20n.step / crtt360n20n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (9 pp, sha256 f0464295db56a699, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF