# CRTT056N06N

**CRMICRO** · MOSFETs · TO-220

CRTT056N06N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±25V and a threshold voltage VGS(th) of 2.4V min, 3V typ, 3.6V max at ID=250uA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDS rated 60V, continuous ID 110A at TC=25°C (silicon limit), pulsed 440A. |
| 3 | S | passive | Source; carries the full drain current (110A silicon limit, 124A package limit at TC=25°C) and the body diode current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 1 |
| Continuous drain current (silicon limit) | ID |  |  | 110 | A | TC = 25°C (Silicon limit) | 1 |
| Continuous drain current (package limit) | ID |  |  | 124 | A | TC = 25°C (Package limit) | 1 |
| Continuous drain current (silicon limit) | ID |  |  | 70 | A | TC = 100°C (Silicon limit) | 1 |
| Pulsed drain current | ID pulse |  |  | 440 | A | TC = 25°C, tp limited by Tjmax | 1 |
| Avalanche energy, single pulse | EAS |  |  | 225 | mJ | L=0.5mH, Rg=25Ω | 1 |
| Power dissipation | Ptot |  |  | 137 | W | TC = 25°C | 1 |
| Operating junction and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Drain-source breakdown voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Gate threshold voltage | VGS(th) | 2.4 | 3 | 3.6 | V | VDS=VGS, ID=250uA | 2 |
| Zero gate voltage drain current (Tj=25°C) | IDSS |  | 0.05 | 1 | µA | VDS=80V, VGS=0V, Tj=25°C | 2 |
| Zero gate voltage drain current (Tj=125°C) | IDSS |  |  | 10 | µA | VDS=80V, VGS=0V, Tj=125°C | 2 |
| Drain-source on-state resistance (Tj=25°C) | RDS(on) |  | 4.2 | 5.6 | mΩ | VGS=10V, ID=40A, Tj=25°C | 2 |
| Drain-source on-state resistance (Tj=150°C) | RDS(on) |  | 8.4 | 10 | mΩ | VGS=10V, ID=40A, Tj=150°C | 2 |
| Gate-source leakage current | IGSS |  |  | 10 | nA | VGS=25V, VDS=0V | 2 |
| Body diode forward voltage | VSD |  | 0.9 | 1.3 | V | VGS=0V, ISD=40A | 3 |
| Thermal resistance, junction to case | RthJC |  |  | 0.91 | °C/W | junction, case | 2 |
| Thermal resistance, junction to ambient | RthJA |  |  | 80 | °C/W | junction, ambient (min. footprint) | 2 |

## CAD (KiCad official)

- Symbol: `CRTT056N06N`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `crtt056n06n-etched.step` / `crtt056n06n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `crtt056n06n.step` / `crtt056n06n.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [CRMICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897077997158400) (9 pp, sha256 `e2a9ad95ab7dd003`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/crtt056n06n-datasheet.pdf)