component
CRTT056N06N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCRTT056N06N
CRMICRO · MOSFETs · TO-220
CRTT056N06N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±25V and a threshold voltage VGS(th) of 2.4V min, 3V typ, 3.6V max at ID=250uA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDS rated 60V, continuous ID 110A at TC=25°C (silicon limit), pulsed 440A. |
| 3 | S | passive | Source; carries the full drain current (110A silicon limit, 124A package limit at TC=25°C) and the body diode current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | 1 | |||
| Gate-source voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous drain current (silicon limit) | ID | 110 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (package limit) | ID | 124 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (silicon limit) | ID | 70 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 440 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Avalanche energy, single pulse | EAS | 225 | mJ | L=0.5mH, Rg=25Ω | 1 | ||
| Power dissipation | Ptot | 137 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.4 | 3 | 3.6 | V | VDS=VGS, ID=250uA | 2 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 0.05 | 1 | µA | VDS=80V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current (Tj=125°C) | IDSS | 10 | µA | VDS=80V, VGS=0V, Tj=125°C | 2 | ||
| Drain-source on-state resistance (Tj=25°C) | RDS(on) | 4.2 | 5.6 | mΩ | VGS=10V, ID=40A, Tj=25°C | 2 | |
| Drain-source on-state resistance (Tj=150°C) | RDS(on) | 8.4 | 10 | mΩ | VGS=10V, ID=40A, Tj=150°C | 2 | |
| Gate-source leakage current | IGSS | 10 | nA | VGS=25V, VDS=0V | 2 | ||
| Body diode forward voltage | VSD | 0.9 | 1.3 | V | VGS=0V, ISD=40A | 3 | |
| Thermal resistance, junction to case | RthJC | 0.91 | °C/W | junction, case | 2 | ||
| Thermal resistance, junction to ambient | RthJA | 80 | °C/W | junction, ambient (min. footprint) | 2 |
CAD (KiCad official)
- Symbol:
CRTT056N06N - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
crtt056n06n-etched.step/crtt056n06n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crtt056n06n.step/crtt056n06n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (9 pp, sha256
e2a9ad95ab7dd003, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).