component
CRTT029N06N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 29d ago |
| viewers | 29d ago |
| crtt029n06n-etched.glb | 29d ago |
| crtt029n06n-etched.step | 29d ago |
| crtt029n06n-hero.glb | 29d ago |
| crtt029n06n-hero.overlay.json | 29d ago |
| crtt029n06n.glb | 29d ago |
| crtt029n06n.kicad_mod | 29d ago |
| crtt029n06n.kicad_sym | 29d ago |
| crtt029n06n.lbr | 29d ago |
| crtt029n06n.step | 29d ago |
| package.json | 29d ago |
| page.json | 24d ago |
| README.md | 24d ago |
CRTT029N06N
CRMICRO · MOSFETs · TO-220
CRTT029N06N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±25V with a typical threshold of 3V (2.4V min, 3.6V max) at ID=250uA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDS max 60V and continuous current 160A (package limit) at TC=25°C. |
| 3 | S | passive | Source; body diode continuous forward current of 160A at TC=25°C flows from source to drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | 1 | |||
| Continuous drain current (Silicon limit) | ID | 220 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (Package limit) | ID | 160 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (Silicon limit) | ID | 139 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 640 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Gate-Source voltage | VGS | -25 | 25 | V | 1 | ||
| Power dissipation | Ptot | 254 | W | TC = 25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 625 | mJ | L=0.5mH, Rg=25Ω | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature, wave soldering at leads | Tsold | 260 | °C | 1.6mm from case for 10s | 1 | ||
| Thermal resistance, junction to case | RthJC | 0.49 | °C/W | junction – case | 2 | ||
| Thermal resistance, junction to ambient | RthJA | 84 | °C/W | min. footprint | 2 | ||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.4 | 3 | 3.6 | V | VDS=VGS, ID=250uA | 2 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=60V, VGS=0V; Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 200 | µA | VDS=60V, VGS=0V; Tj=150°C | 2 | ||
| Gate-source leakage current | IGSS | -100 | 10 | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Gate-source leakage current | IGSS | 200 | nA | Tj=150°C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 2.3 | 2.9 | mΩ | VGS=10V, ID=80A, Tj=25°C | 2 | |
| Drain-source on-state resistance | RDS(on) | 3.9 | 5 | mΩ | VGS=10V, ID=80A, Tj=150°C | 2 | |
| Body diode forward voltage | VSD | 0.9 | 1.3 | V | VGS=0V, ISD=80A | 3 | |
| Body diode continuous forward current | IS | 160 | A | TC = 25°C | 3 | ||
| Transconductance | gfs | 211 | S | VDS=5V, ID=80A | 2 | ||
| Input capacitance | Ciss | 7830 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Output capacitance | Coss | 1208 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 577 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Gate total charge | QG | 183 | nC | VGS=10V, VDS=30V, ID=80A, f=1MHz | 2 | ||
| Gate resistance | RG | 1.3 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Body diode reverse recovery time | trr | 56 | ns | IF=80A, dI/dt=100A/µs | 3 | ||
| Body diode reverse recovery charge | Qrr | 116 | nC | 3 |
CAD (KiCad official)
- Symbol:
CRTT029N06N - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
crtt029n06n-etched.step/crtt029n06n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crtt029n06n.step/crtt029n06n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (9 pp, sha256
f90daa3fe267bfea, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).