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Contents

README

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CRTT029N06N

CRMICRO · MOSFETs · TO-220

CRTT029N06N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±25V with a typical threshold of 3V (2.4V min, 3.6V max) at ID=250uA.
2 D passive Drain, also connected to the metal tab; VDS max 60V and continuous current 160A (package limit) at TC=25°C.
3 S passive Source; body diode continuous forward current of 160A at TC=25°C flows from source to drain.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 1
Continuous drain current (Silicon limit) ID 220 A TC = 25°C (Silicon limit) 1
Continuous drain current (Package limit) ID 160 A TC = 25°C (Package limit) 1
Continuous drain current (Silicon limit) ID 139 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 640 A TC = 25°C, tp limited by Tjmax 1
Gate-Source voltage VGS -25 25 V 1
Power dissipation Ptot 254 W TC = 25°C 1
Avalanche energy, single pulse EAS 625 mJ L=0.5mH, Rg=25Ω 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature, wave soldering at leads Tsold 260 °C 1.6mm from case for 10s 1
Thermal resistance, junction to case RthJC 0.49 °C/W junction – case 2
Thermal resistance, junction to ambient RthJA 84 °C/W min. footprint 2
Drain-source breakdown voltage BVDSS 60 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(th) 2.4 3 3.6 V VDS=VGS, ID=250uA 2
Zero gate voltage drain current IDSS 0.1 1 µA VDS=60V, VGS=0V; Tj=25°C 2
Zero gate voltage drain current IDSS 200 µA VDS=60V, VGS=0V; Tj=150°C 2
Gate-source leakage current IGSS -100 10 100 nA VGS=±25V, VDS=0V 2
Gate-source leakage current IGSS 200 nA Tj=150°C 2
Drain-source on-state resistance RDS(on) 2.3 2.9 mΩ VGS=10V, ID=80A, Tj=25°C 2
Drain-source on-state resistance RDS(on) 3.9 5 mΩ VGS=10V, ID=80A, Tj=150°C 2
Body diode forward voltage VSD 0.9 1.3 V VGS=0V, ISD=80A 3
Body diode continuous forward current IS 160 A TC = 25°C 3
Transconductance gfs 211 S VDS=5V, ID=80A 2
Input capacitance Ciss 7830 pF VGS=0V, VDS=30V, f=1MHz 2
Output capacitance Coss 1208 pF VGS=0V, VDS=30V, f=1MHz 2
Reverse transfer capacitance Crss 577 pF VGS=0V, VDS=30V, f=1MHz 2
Gate total charge QG 183 nC VGS=10V, VDS=30V, ID=80A, f=1MHz 2
Gate resistance RG 1.3 Ω VGS=0V, VDS=0V, f=1MHz 2
Body diode reverse recovery time trr 56 ns IF=80A, dI/dt=100A/µs 3
Body diode reverse recovery charge Qrr 116 nC 3

CAD (KiCad official)

  • Symbol: CRTT029N06N
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: crtt029n06n-etched.step / crtt029n06n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crtt029n06n.step / crtt029n06n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (9 pp, sha256 f90daa3fe267bfea, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF