component
CRTT029N06N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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crtt029n06n: specified limits as data (metadata.characteristics, 30 rows from the datasheet)
2 files changed
+405−1
README.md+37@@ -21,6 +21,43 @@ CRTT029N06N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 60 | V | | 1 |+| Continuous drain current (Silicon limit) | ID | | | 220 | A | TC = 25°C (Silicon limit) | 1 |+| Continuous drain current (Package limit) | ID | | | 160 | A | TC = 25°C (Package limit) | 1 |+| Continuous drain current (Silicon limit) | ID | | | 139 | A | TC = 100°C (Silicon limit) | 1 |+| Pulsed drain current | ID pulse | | | 640 | A | TC = 25°C, tp limited by Tjmax | 1 |+| Gate-Source voltage | VGS | -25 | | 25 | V | | 1 |+| Power dissipation | Ptot | | | 254 | W | TC = 25°C | 1 |+| Avalanche energy, single pulse | EAS | | | 625 | mJ | L=0.5mH, Rg=25Ω | 1 |+| Operating junction and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |+| Soldering temperature, wave soldering at leads | Tsold | | | 260 | °C | 1.6mm from case for 10s | 1 |+| Thermal resistance, junction to case | RthJC | | | 0.49 | °C/W | junction – case | 2 |+| Thermal resistance, junction to ambient | RthJA | | | 84 | °C/W | min. footprint | 2 |+| Drain-source breakdown voltage | BVDSS | 60 | | | V | VGS=0V, ID=250uA | 2 |+| Gate threshold voltage | VGS(th) | 2.4 | 3 | 3.6 | V | VDS=VGS, ID=250uA | 2 |+| Zero gate voltage drain current | IDSS | | 0.1 | 1 | µA | VDS=60V, VGS=0V; Tj=25°C | 2 |+| Zero gate voltage drain current | IDSS | | | 200 | µA | VDS=60V, VGS=0V; Tj=150°C | 2 |+| Gate-source leakage current | IGSS | -100 | 10 | 100 | nA | VGS=±25V, VDS=0V | 2 |+| Gate-source leakage current | IGSS | | | 200 | nA | Tj=150°C | 2 |+| Drain-source on-state resistance | RDS(on) | | 2.3 | 2.9 | mΩ | VGS=10V, ID=80A, Tj=25°C | 2 |+| Drain-source on-state resistance | RDS(on) | | 3.9 | 5 | mΩ | VGS=10V, ID=80A, Tj=150°C | 2 |+| Body diode forward voltage | VSD | | 0.9 | 1.3 | V | VGS=0V, ISD=80A | 3 |+| Body diode continuous forward current | IS | | | 160 | A | TC = 25°C | 3 |+| Transconductance | gfs | | 211 | | S | VDS=5V, ID=80A | 2 |+| Input capacitance | Ciss | | 7830 | | pF | VGS=0V, VDS=30V, f=1MHz | 2 |+| Output capacitance | Coss | | 1208 | | pF | VGS=0V, VDS=30V, f=1MHz | 2 |+| Reverse transfer capacitance | Crss | | 577 | | pF | VGS=0V, VDS=30V, f=1MHz | 2 |+| Gate total charge | QG | | 183 | | nC | VGS=10V, VDS=30V, ID=80A, f=1MHz | 2 |+| Gate resistance | RG | | 1.3 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |+| Body diode reverse recovery time | trr | | 56 | | ns | IF=80A, dI/dt=100A/µs | 3 |+| Body diode reverse recovery charge | Qrr | | 116 | | nC | | 3 |+ ## CAD (KiCad official) - Symbol: `CRTT029N06N`
page.json+368−1@@ -148,6 +148,373 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f90daa3fe267bfea",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (Silicon limit)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 220,+ "conditions": "TC = 25°C (Silicon limit)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (Package limit)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "TC = 25°C (Package limit)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (Silicon limit)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 139,+ "conditions": "TC = 100°C (Silicon limit)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 640,+ "conditions": "TC = 25°C, tp limited by Tjmax",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 254,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 625,+ "conditions": "L=0.5mH, Rg=25Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering temperature, wave soldering at leads",+ "symbol": "Tsold",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1.6mm from case for 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.49,+ "conditions": "junction – case",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 84,+ "conditions": "min. footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.4,+ "typ": 3,+ "max": 3.6,+ "conditions": "VDS=VGS, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "VDS=60V, VGS=0V; Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "VDS=60V, VGS=0V; Tj=150°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": 10,+ "max": 100,+ "conditions": "VGS=±25V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Tj=150°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 2.3,+ "max": 2.9,+ "conditions": "VGS=10V, ID=80A, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.9,+ "max": 5,+ "conditions": "VGS=10V, ID=80A, Tj=150°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.9,+ "max": 1.3,+ "conditions": "VGS=0V, ISD=80A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode continuous forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "TC = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 211,+ "max": null,+ "conditions": "VDS=5V, ID=80A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 7830,+ "max": null,+ "conditions": "VGS=0V, VDS=30V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1208,+ "max": null,+ "conditions": "VGS=0V, VDS=30V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 577,+ "max": null,+ "conditions": "VGS=0V, VDS=30V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate total charge",+ "symbol": "QG",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 183,+ "max": null,+ "conditions": "VGS=10V, VDS=30V, ID=80A, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.3,+ "max": null,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 56,+ "max": null,+ "conditions": "IF=80A, dI/dt=100A/µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body diode reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 116,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +556,4 @@ "visibility": { "public": true }-}+}