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CRST100N06L2

Public Made by Adom

by adom

CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CRST100N06L2

CRMICRO · MOSFETs · TO-220

CRST100N06L2 from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with a maximum gate-source voltage of ±20 V and RDS(on) specified at VGS=10 V and 4.5 V.
2 D passive Drain, also connected to the mounting tab; drain-source voltage is 60 V max and continuous drain current is 80 A (package limit) at TC=25°C.
3 S passive Source; connects to the body diode anode and the return for the 60 V, 80 A (package limit) power path.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 1
Continuous drain current (package limit) ID 80 A TC = 25°C (Package limit) 1
Continuous drain current (silicon limit) ID 118 A TC = 25°C (Silicon limit) 1
Continuous drain current (silicon limit) ID 75 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 320 A TA = 25°C, tp limited by Tjmax 1
Gate-Source voltage VGS -20 20 V 1
Power dissipation Ptot 227.3 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Repetitive avalanche energy EAR 22 mJ L=0.3mH 1
Avalanche current IAS 16 A L=0.3mH 1
Avalanche energy, single pulse EAS 38 mJ L=0.3mH, Rg=25Ω 1
Repetitive avalanche current IAR 12 A L=0.3mH 1
Thermal resistance, junction-case RthJC 0.55 °C/W 2
Thermal resistance, junction-ambient RthJA 62 °C/W min. footprint 2
Drain-source breakdown voltage BVDSS 60 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(th) 1.4 1.7 V VDS=VGS, ID=250uA 2
Zero gate voltage drain current IDSS 1 µA VDS=60V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 10 µA VDS=60V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS 100 nA VGS=±20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 8.4 10.1 mΩ VGS=10V, ID=20A 2
Drain-source on-state resistance RDS(on) 11.5 14.4 mΩ VGS=4.5V, ID=20A 2
Body diode forward voltage VSD 0.95 1 V VGS=0V, ISD=35A 3
Transconductance gfs 102 S VDS=5V, ID=50A 2
Gate resistance RG 1.4 Ω VGS=0V, VDS=0V, f=1MHz 2
Input capacitance Ciss 1038 pF VGS=0V, VDS=30V, f=1MHz 2
Output capacitance Coss 309 pF VGS=0V, VDS=30V, f=1MHz 2
Reverse transfer capacitance Crss 39 pF VGS=0V, VDS=30V, f=1MHz 2
Gate total charge QG 17.7 nC VGS=10V, VDS=30V, ID=35A 2
Gate-source charge Qgs 4.7 nC VGS=10V, VDS=30V, ID=35A 2
Gate-drain charge Qgd 2.7 nC VGS=10V, VDS=30V, ID=35A 2
Body diode reverse recovery time trr 27 ns IF=35A, dI/dt=100A/µs 3
Body diode reverse recovery charge Qrr 17.8 nC IF=35A, dI/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: CRST100N06L2
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: crst100n06l2-etched.step / crst100n06l2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crst100n06l2.step / crst100n06l2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (9 pp, sha256 bf416da1a5f0f7b5, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF