component
CRST100N06L2
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCRST100N06L2
CRMICRO · MOSFETs · TO-220
CRST100N06L2 from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with a maximum gate-source voltage of ±20 V and RDS(on) specified at VGS=10 V and 4.5 V. |
| 2 | D | passive | Drain, also connected to the mounting tab; drain-source voltage is 60 V max and continuous drain current is 80 A (package limit) at TC=25°C. |
| 3 | S | passive | Source; connects to the body diode anode and the return for the 60 V, 80 A (package limit) power path. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | 1 | |||
| Continuous drain current (package limit) | ID | 80 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (silicon limit) | ID | 118 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (silicon limit) | ID | 75 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 320 | A | TA = 25°C, tp limited by Tjmax | 1 | ||
| Gate-Source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 227.3 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Repetitive avalanche energy | EAR | 22 | mJ | L=0.3mH | 1 | ||
| Avalanche current | IAS | 16 | A | L=0.3mH | 1 | ||
| Avalanche energy, single pulse | EAS | 38 | mJ | L=0.3mH, Rg=25Ω | 1 | ||
| Repetitive avalanche current | IAR | 12 | A | L=0.3mH | 1 | ||
| Thermal resistance, junction-case | RthJC | 0.55 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RthJA | 62 | °C/W | min. footprint | 2 | ||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.4 | 1.7 | V | VDS=VGS, ID=250uA | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=60V, VGS=0V, Tj=25°C | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=60V, VGS=0V, Tj=125°C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=±20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 8.4 | 10.1 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-source on-state resistance | RDS(on) | 11.5 | 14.4 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Body diode forward voltage | VSD | 0.95 | 1 | V | VGS=0V, ISD=35A | 3 | |
| Transconductance | gfs | 102 | S | VDS=5V, ID=50A | 2 | ||
| Gate resistance | RG | 1.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Input capacitance | Ciss | 1038 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Output capacitance | Coss | 309 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 39 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Gate total charge | QG | 17.7 | nC | VGS=10V, VDS=30V, ID=35A | 2 | ||
| Gate-source charge | Qgs | 4.7 | nC | VGS=10V, VDS=30V, ID=35A | 2 | ||
| Gate-drain charge | Qgd | 2.7 | nC | VGS=10V, VDS=30V, ID=35A | 2 | ||
| Body diode reverse recovery time | trr | 27 | ns | IF=35A, dI/dt=100A/µs | 3 | ||
| Body diode reverse recovery charge | Qrr | 17.8 | nC | IF=35A, dI/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
CRST100N06L2 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
crst100n06l2-etched.step/crst100n06l2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crst100n06l2.step/crst100n06l2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (9 pp, sha256
bf416da1a5f0f7b5, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).