# CRSS031N08N

**CRMICRO** · MOSFETs · TO-263

CRSS031N08N from CRMICRO, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET channel, with VGS rated at ±20 V maximum and a gate threshold of 2.2 V min, 3 V typ, 3.8 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; rated for VDS of 85 V, continuous drain current of 160 A (package limit) and pulsed drain current of 640 A. |
| 3 | S | passive | Source; connected to the body diode anode, with a body diode forward voltage of 0.93 V typ and 1.4 V max at ISD=80 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-263 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 85 | V |  | 1 |
| Gate-Source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous drain current (Silicon limit) | ID |  |  | 208 | A | TC = 25°C (Silicon limit) | 1 |
| Continuous drain current (Package limit) | ID |  |  | 160 | A | TC = 25°C (Package limit) | 1 |
| Continuous drain current (Silicon limit) | ID |  |  | 131 | A | TC = 100°C (Silicon limit) | 1 |
| Pulsed drain current | ID pulse |  |  | 640 | A | TC = 25°C, tp limited by Tjmax | 1 |
| Avalanche energy, single pulse | EAS |  |  | 400 | mJ | L=0.5mH, Rg=25Ω; tested at Tj = 25℃, ID = 40A | 1 |
| Power dissipation | Ptot |  |  | 227 | W | TC = 25°C | 1 |
| Operating junction and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction-case | RthJC |  |  | 0.55 | °C/W |  | 2 |
| Thermal resistance, junction-ambient | RthJA |  |  | 62 | °C/W | min. footprint | 2 |
| Drain-source breakdown voltage | BVDSS | 85 |  |  | V | VGS=0V, ID=250uA | 2 |
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=250uA | 2 |
| Zero gate voltage drain current | IDSS |  | 0.05 | 1 | µA | VDS=80V, VGS=0V, Tj=25°C | 2 |
| Zero gate voltage drain current | IDSS |  |  | 10 | µA | VDS=80V, VGS=0V, Tj=125°C | 2 |
| Gate-source leakage current | IGSS |  | 10 | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2.3 | 2.8 | mΩ | VGS=10V, ID=80A, TO-263 | 2 |
| Transconductance | gfs |  | 144 |  | S | VDS=5V, ID=80A | 2 |
| Gate resistance | RG |  | 2.1 |  | Ω | f=1MHz | 2 |
| Body diode forward voltage | VSD |  | 0.93 | 1.4 | V | VGS=0V, ISD=80A | 3 |

## CAD (KiCad official)

- Symbol: `CRSS031N08N`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `crss031n08n-etched.step` / `crss031n08n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `crss031n08n.step` / `crss031n08n.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [CRMICRO datasheet](docs/crss031n08n-datasheet.pdf) (10 pp, sha256 `411af7d33a6f7f71`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/crss031n08n-datasheet.pdf)