component
CRSS031N08N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCRSS031N08N
CRMICRO · MOSFETs · TO-263
CRSS031N08N from CRMICRO, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET channel, with VGS rated at ±20 V maximum and a gate threshold of 2.2 V min, 3 V typ, 3.8 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; rated for VDS of 85 V, continuous drain current of 160 A (package limit) and pulsed drain current of 640 A. |
| 3 | S | passive | Source; connected to the body diode anode, with a body diode forward voltage of 0.93 V typ and 1.4 V max at ISD=80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-263 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 85 | V | 1 | |||
| Gate-Source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (Silicon limit) | ID | 208 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (Package limit) | ID | 160 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (Silicon limit) | ID | 131 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 640 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Avalanche energy, single pulse | EAS | 400 | mJ | L=0.5mH, Rg=25Ω; tested at Tj = 25℃, ID = 40A | 1 | ||
| Power dissipation | Ptot | 227 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 0.55 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RthJA | 62 | °C/W | min. footprint | 2 | ||
| Drain-source breakdown voltage | BVDSS | 85 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=250uA | 2 |
| Zero gate voltage drain current | IDSS | 0.05 | 1 | µA | VDS=80V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=80V, VGS=0V, Tj=125°C | 2 | ||
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-source on-state resistance | RDS(on) | 2.3 | 2.8 | mΩ | VGS=10V, ID=80A, TO-263 | 2 | |
| Transconductance | gfs | 144 | S | VDS=5V, ID=80A | 2 | ||
| Gate resistance | RG | 2.1 | Ω | f=1MHz | 2 | ||
| Body diode forward voltage | VSD | 0.93 | 1.4 | V | VGS=0V, ISD=80A | 3 |
CAD (KiCad official)
- Symbol:
CRSS031N08N - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
crss031n08n-etched.step/crss031n08n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crss031n08n.step/crss031n08n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (10 pp, sha256
411af7d33a6f7f71, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).