main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 24d ago
viewers crsd082n10l2: viewers · Ray 24d ago
crsd082n10l2-etched.glb Publish 0.1.0 · Ray 24d ago
crsd082n10l2-etched.step crsd082n10l2: factory component page (tier=lcsc) · Ray 24d ago
crsd082n10l2-hero.glb crsd082n10l2: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
crsd082n10l2-hero.overlay.json Publish 0.1.0 · Ray 24d ago
crsd082n10l2.glb Publish 0.1.0 · Ray 24d ago
crsd082n10l2.kicad_mod Publish 0.1.0 · Ray 24d ago
crsd082n10l2.kicad_sym Publish 0.1.0 · Ray 24d ago
crsd082n10l2.lbr Publish 0.1.0 · Ray 24d ago
crsd082n10l2.step Publish 0.1.0 · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json Set visibility: public · Ray 24d ago
README.md Publish 0.1.0 · Ray 24d ago

CRSD082N10L2

CRMICRO · MOSFETs · TO-252

CRSD082N10L2 from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is limited to ±20 V absolute maximum, with a gate threshold of 1.4 to 2.2 V (1.8 V typ) at ID=250 µA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage is 100 V maximum and continuous drain current is 78 A silicon-limited at TC=25°C.
3 S passive Source; connects to the body diode anode and is the return for the 78 A continuous (silicon limit) drain current.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Continuous drain current (Silicon limit) ID 78 A TC = 25°C (Silicon limit) 1
Continuous drain current (Package limit) ID 80 A TC = 25°C (Package limit) 1
Continuous drain current (Silicon limit) ID 50 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 313 A TC = 25°C, tp limited by Tjmax 1
Avalanche energy, single pulse EAS 121 mJ L=0.5mH, Rg=25Ω 1
Gate-source voltage VGS -20 20 V 1
Power dissipation Ptot 101 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction to case RthJC 1.24 °C/W 2
Thermal resistance, junction to ambient RthJA 115 °C/W min. footprint 2
Drain-source breakdown voltage BVDSS 100 V VGS=0V, ID=250uA 2
Zero gate voltage drain current (Tj=25°C) IDSS 1 µA VDS=80V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current (Tj=125°C) IDSS 10 µA VDS=80V, VGS=0V, Tj=125°C 2
Gate threshold voltage VGS(th) 1.4 1.8 2.2 V VDS=VGS, ID=250uA 2
Gate-source leakage current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 7.2 8.6 mΩ VGS=10V, ID=50A 2
Drain-source on-state resistance RDS(on) 9 10.8 mΩ VGS=4.5V, ID=50A 2
Body diode forward voltage VSD 0.93 1.4 V VGS=0V, ISD=50A 3

CAD (KiCad official)

  • Symbol: CRSD082N10L2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: crsd082n10l2-etched.step / crsd082n10l2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crsd082n10l2.step / crsd082n10l2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (9 pp, sha256 892a91af06714d94, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF