# CRG75T65BK5SD

**CRMICRO** · IGBTs · TO-247

CRG75T65BK5SD from CRMICRO, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; absolute maximum gate-emitter voltage is ±20 V DC and ±30 V transient (tp≤10 µs, D<0.01), with threshold voltage 3.5 V min to 6.5 V max at IC=250 µA. |
| 2 | C | passive | Collector (also connected to the mounting tab in the package outline); VCES is 650 V and DC collector current is 75 A at TC=100 °C (90 A at 25 °C). |
| 3 | E | passive | Emitter, shared with the anti-parallel diode anode; diode forward current is 75 A at TC=100 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter DC voltage | VCES |  |  | 650 | V |  | 2 |
| Gate-emitter DC voltage | VGES | -20 |  | 20 | V |  | 2 |
| Gate-emitter transient voltage | VGES | -30 |  | 30 | V | tp≤10μs,D<0.01 | 2 |
| Collector DC current | IC |  |  | 90 | A | TC=25℃ | 2 |
| Collector DC current | IC |  |  | 75 | A | TC=100℃ | 2 |
| Collector pulsed current | ICM |  |  | 300 | A | TC=25℃ | 2 |
| Diode DC forward current | IF |  |  | 90 | A | TC=25℃ | 2 |
| Diode DC forward current | IF |  |  | 75 | A | TC=100℃ | 2 |
| Diode pulsed forward current | IFM |  |  | 300 | A |  | 2 |
| Power dissipation | PD |  |  | 468 | W | TC=25℃ | 2 |
| Power dissipation | PD |  |  | 234 | W | TC=100℃ | 2 |
| Operating junction temperature range | Tj | -40 |  | 175 | ℃ |  | 2 |
| Storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Lead soldering temperature | TL |  |  | 270 | ℃ |  | 2 |
| Thermal resistance junction-to-case (IGBT) | RθJC |  |  | 0.32 | ℃/W |  | 2 |
| Thermal resistance junction-to-case (diode) | RθJC |  |  | 0.4 | ℃/W |  | 2 |
| Thermal resistance junction-to-ambient | RθJA |  |  | 40 | ℃/W |  | 2 |
| Collector-emitter breakdown voltage | V(BR)CES | 650 |  |  | V | VGE=0V,ICE=250uA | 2 |
| Zero gate voltage collector current | ICES |  |  | 1 | mA | VGE=0V,VCE=650V | 2 |
| Forward gate-body leakage current | IGES(F) |  |  | 250 | nA | VGE=+20V | 2 |
| Reverse gate-body leakage current | IGES(R) |  |  | -250 | nA | VGE =-20V | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  | 1.45 | 1.9 | V | IC=75A ,VGE=15V，TC=25℃ | 2 |
| Gate threshold voltage | VGE(th) | 3.5 |  | 6.5 | V | IC=250uA ,VCE=VGE | 2 |
| Diode forward voltage | VF |  | 1.83 | 2.3 | V | IF=75A,TC=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `CRG75T65BK5SD`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `crg75t65bk5sd-etched.step` / `crg75t65bk5sd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `crg75t65bk5sd.step` / `crg75t65bk5sd.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [CRMICRO datasheet](docs/crg75t65bk5sd-datasheet.pdf) (9 pp, sha256 `1f42212d66b32c40`, retrieved 2026-11-07, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/crg75t65bk5sd-datasheet.pdf)