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CRG75T65BK5SD

CRMICRO · IGBTs · TO-247

CRG75T65BK5SD from CRMICRO, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; absolute maximum gate-emitter voltage is ±20 V DC and ±30 V transient (tp≤10 µs, D<0.01), with threshold voltage 3.5 V min to 6.5 V max at IC=250 µA.
2 C passive Collector (also connected to the mounting tab in the package outline); VCES is 650 V and DC collector current is 75 A at TC=100 °C (90 A at 25 °C).
3 E passive Emitter, shared with the anti-parallel diode anode; diode forward current is 75 A at TC=100 °C.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter DC voltage VCES 650 V 2
Gate-emitter DC voltage VGES -20 20 V 2
Gate-emitter transient voltage VGES -30 30 V tp≤10μs,D<0.01 2
Collector DC current IC 90 A TC=25℃ 2
Collector DC current IC 75 A TC=100℃ 2
Collector pulsed current ICM 300 A TC=25℃ 2
Diode DC forward current IF 90 A TC=25℃ 2
Diode DC forward current IF 75 A TC=100℃ 2
Diode pulsed forward current IFM 300 A 2
Power dissipation PD 468 W TC=25℃ 2
Power dissipation PD 234 W TC=100℃ 2
Operating junction temperature range Tj -40 175 ℃ 2
Storage temperature range Tstg -55 150 ℃ 2
Lead soldering temperature TL 270 ℃ 2
Thermal resistance junction-to-case (IGBT) RθJC 0.32 ℃/W 2
Thermal resistance junction-to-case (diode) RθJC 0.4 ℃/W 2
Thermal resistance junction-to-ambient RθJA 40 ℃/W 2
Collector-emitter breakdown voltage V(BR)CES 650 V VGE=0V,ICE=250uA 2
Zero gate voltage collector current ICES 1 mA VGE=0V,VCE=650V 2
Forward gate-body leakage current IGES(F) 250 nA VGE=+20V 2
Reverse gate-body leakage current IGES(R) -250 nA VGE =-20V 2
Collector-emitter saturation voltage VCE(sat) 1.45 1.9 V IC=75A ,VGE=15V,TC=25℃ 2
Gate threshold voltage VGE(th) 3.5 6.5 V IC=250uA ,VCE=VGE 2
Diode forward voltage VF 1.83 2.3 V IF=75A,TC=25℃ 3

CAD (KiCad official)

  • Symbol: CRG75T65BK5SD
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: crg75t65bk5sd-etched.step / crg75t65bk5sd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crg75t65bk5sd.step / crg75t65bk5sd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (9 pp, sha256 1f42212d66b32c40, retrieved 2026-11-07, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF