component
CR7N65A4K
Public Made by Adomby adom
CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CR7N65A4K
CRMICRO · MOSFETs · TO-252
CR7N65A4K from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; gate-to-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA. |
| 2 | Drain | passive | Drain terminal (also the tab); rated 650 V drain-to-source, 7 A continuous and 28 A pulsed drain current. |
| 3 | Source | passive | Source terminal; body diode continuous current up to 7 A and pulsed 28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Continuous Drain Current | ID | 7 | A | 1 | |||
| Continuous Drain Current | ID | 4.4 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 28 | A | Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | Printed as ±30 | 1 | |
| Single Pulse Avalanche Energy | EAS | 350 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 108 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.16 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | ℃/W | 3 | |||
| Drain to Source Breakdown Voltage | VDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =650V, VGS= 0V, TJ = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =520V, VGS= 0V, TJ = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 1.2 | 1.4 | Ω | VGS=10V,ID=3.5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Continuous Source Current (Body Diode) | IS | 7 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 28 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=7A,VGS=0V | 3 | ||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.7 | V/℃ | ID=250uA,Reference25℃ | 2 | ||
| Forward Transconductance | gfs | 6.5 | S | VDS=15V, ID =3.5A | 2 | ||
| Input Capacitance | Ciss | 1080 | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 75 | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 3.2 | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 18 | ns | ID =7A VDD = 325V RG =10Ω | 2 | ||
| Rise Time | tr | 15 | ns | ID =7A VDD = 325V RG =10Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 34 | ns | ID =7A VDD = 325V RG =10Ω | 2 | ||
| Fall Time | tf | 15 | ns | ID =7A VDD = 325V RG =10Ω | 2 | ||
| Total Gate Charge | Qg | 24 | nC | ID =7A VDD =520V VGS = 10V | 2 | ||
| Gate to Source Charge | Qgs | 5.2 | nC | ID =7A VDD =520V VGS = 10V | 2 | ||
| Gate to Drain (Miller) Charge | Qgd | 11 | nC | ID =7A VDD =520V VGS = 10V | 2 | ||
| Reverse Recovery Time | trr | 750 | ns | IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 4640 | nC | IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Current | IRRM | 12.4 | A | IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 | ||
| Derating Factor above 25°C | 0.8 | W/℃ | Above 25°C | 1 |
CAD (KiCad official)
- Symbol:
CR7N65A4K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cr7n65a4k-etched.step/cr7n65a4k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cr7n65a4k.step/cr7n65a4k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (10 pp, sha256
32f03f6e23787cca, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CR7N65A4K
**CRMICRO** · MOSFETs · TO-252
CR7N65A4K from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; gate-to-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA. |
| 2 | Drain | passive | Drain terminal (also the tab); rated 650 V drain-to-source, 7 A continuous and 28 A pulsed drain current. |
| 3 | Source | passive | Source terminal; body diode continuous current up to 7 A and pulsed 28 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 650 | V | | 1 |
| Continuous Drain Current | ID | | | 7 | A | | 1 |
| Continuous Drain Current | ID | | | 4.4 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 28 | A | Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | Printed as ±30 | 1 |
| Single Pulse Avalanche Energy | EAS | | | 350 | mJ | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | | 1 |
| Power Dissipation | PD | | | 108 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 1.16 | ℃/W | | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 100 | ℃/W | | 3 |
| Drain to Source Breakdown Voltage | VDSS | 650 | | | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS =650V, VGS= 0V, TJ = 25℃ | 2 |
| Drain to Source Leakage Current | IDSS | | | 100 | µA | VDS =520V, VGS= 0V, TJ = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS =+30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | | | -100 | nA | VGS =-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 1.2 | 1.4 | Ω | VGS=10V,ID=3.5A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Continuous Source Current (Body Diode) | IS | | | 7 | A | | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 28 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.5 | V | IS=7A,VGS=0V | 3 |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.7 | | V/℃ | ID=250uA,Reference25℃ | 2 |
| Forward Transconductance | gfs | | 6.5 | | S | VDS=15V, ID =3.5A | 2 |
| Input Capacitance | Ciss | | 1080 | | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 75 | | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 3.2 | | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Turn-on Delay Time | td(ON) | | 18 | | ns | ID =7A VDD = 325V RG =10Ω | 2 |
| Rise Time | tr | | 15 | | ns | ID =7A VDD = 325V RG =10Ω | 2 |
| Turn-Off Delay Time | td(OFF) | | 34 | | ns | ID =7A VDD = 325V RG =10Ω | 2 |
| Fall Time | tf | | 15 | | ns | ID =7A VDD = 325V RG =10Ω | 2 |
| Total Gate Charge | Qg | | 24 | | nC | ID =7A VDD =520V VGS = 10V | 2 |
| Gate to Source Charge | Qgs | | 5.2 | | nC | ID =7A VDD =520V VGS = 10V | 2 |
| Gate to Drain (Miller) Charge | Qgd | | 11 | | nC | ID =7A VDD =520V VGS = 10V | 2 |
| Reverse Recovery Time | trr | | 750 | | ns | IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Charge | Qrr | | 4640 | | nC | IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Current | IRRM | | 12.4 | | A | IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 |
| Derating Factor above 25°C | | | 0.8 | | W/℃ | Above 25°C | 1 |
## CAD (KiCad official)
- Symbol: `CR7N65A4K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `cr7n65a4k-etched.step` / `cr7n65a4k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cr7n65a4k.step` / `cr7n65a4k.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CRMICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588946175244713984) (10 pp, sha256 `32f03f6e23787cca`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cr7n65a4k-datasheet.pdf)