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CR7N65A4K

Public Made by Adom

by adom

CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CR7N65A4K

CRMICRO · MOSFETs · TO-252

CR7N65A4K from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input; gate-to-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at ID=250µA.
2 Drain passive Drain terminal (also the tab); rated 650 V drain-to-source, 7 A continuous and 28 A pulsed drain current.
3 Source passive Source terminal; body diode continuous current up to 7 A and pulsed 28 A.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Continuous Drain Current ID 7 A 1
Continuous Drain Current ID 4.4 A TC = 100 °C 1
Pulsed Drain Current IDM 28 A Repetitive rating; pulse width limited by maximum junction temperature (footnote a1) 1
Gate-to-Source Voltage VGS -30 30 V Printed as ±30 1
Single Pulse Avalanche Energy EAS 350 mJ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Power Dissipation PD 108 W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 1.16 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 100 ℃/W 3
Drain to Source Breakdown Voltage VDSS 650 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS =650V, VGS= 0V, TJ = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =520V, VGS= 0V, TJ = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 1.2 1.4 Ω VGS=10V,ID=3.5A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Continuous Source Current (Body Diode) IS 7 A 3
Maximum Pulsed Current (Body Diode) ISM 28 A 3
Diode Forward Voltage VSD 1.5 V IS=7A,VGS=0V 3
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.7 V/℃ ID=250uA,Reference25℃ 2
Forward Transconductance gfs 6.5 S VDS=15V, ID =3.5A 2
Input Capacitance Ciss 1080 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Output Capacitance Coss 75 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Reverse Transfer Capacitance Crss 3.2 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Turn-on Delay Time td(ON) 18 ns ID =7A VDD = 325V RG =10Ω 2
Rise Time tr 15 ns ID =7A VDD = 325V RG =10Ω 2
Turn-Off Delay Time td(OFF) 34 ns ID =7A VDD = 325V RG =10Ω 2
Fall Time tf 15 ns ID =7A VDD = 325V RG =10Ω 2
Total Gate Charge Qg 24 nC ID =7A VDD =520V VGS = 10V 2
Gate to Source Charge Qgs 5.2 nC ID =7A VDD =520V VGS = 10V 2
Gate to Drain (Miller) Charge Qgd 11 nC ID =7A VDD =520V VGS = 10V 2
Reverse Recovery Time trr 750 ns IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 4640 nC IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Current IRRM 12.4 A IS=7A,Tj = 25℃ dIF/dt=100A/us, VGS=0V 3
Derating Factor above 25°C 0.8 W/℃ Above 25°C 1

CAD (KiCad official)

  • Symbol: CR7N65A4K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cr7n65a4k-etched.step / cr7n65a4k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cr7n65a4k.step / cr7n65a4k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 32f03f6e23787cca, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF