component

CPH6341-TL-W

Public Made by Adom

by adom

onsemi MOSFETs, SOT-26-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CPH6341-TL-W

onsemi · MOSFETs · SOT-26-6

CPH6341-TL-W from onsemi, in a SOT-26-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings.
2 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings.
3 Gate input Gate terminal of the MOSFET, with a gate-to-source voltage rating of ±20 V per the absolute maximum ratings.
4 Source passive Source terminal of the P-channel MOSFET, the reference for the gate-to-source voltage rating.
5 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings.
6 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-26-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -30 V 1
Gate-to-Source Voltage VGSS -20 20 V 1
Drain Current (DC) ID -5 A 1
Drain Current (Pulse) IDP -20 A PW≤10ms, duty cycle≤1% 1
Allowable Power Dissipation PD 1.6 W When mounted on ceramic substrate (900mm2×0.8mm) 1
Channel Temperature Tch 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Drain-to-Source Breakdown Voltage V(BR)DSS -30 V ID=--1mA, VGS=0V 2
Zero-Gate Voltage Drain Current IDSS -1 mA VDS=--30V, VGS=0V 2
Gate-to-Source Leakage Current IGSS -10 10 mA VGS=±16V, VDS=0V 2
Cutoff Voltage VGS(off) -1.2 -2.6 V VDS=--10V, ID=--1mA 2
Forward Transfer Admittance /yfs/ 2.8 4.8 S VDS=--10V, ID=--3A 2
Static Drain-to-Source On-State Resistance RDS(on)1 45 59 mW ID=--3A, VGS=--10V 2
Static Drain-to-Source On-State Resistance RDS(on)2 71 100 mW ID=--1.5A, VGS=--4.5V 2
Static Drain-to-Source On-State Resistance RDS(on)3 82 115 mW ID=--1.5 A, VGS=--4V 2
Diode Forward Voltage VSD -0.87 -1.2 V IS=--5A, VGS=0V 2

CAD (KiCad official)

  • Symbol: CPH6341-TL-W
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26-6 (KiCad packages3D, STEP)
  • 3D model files: cph6341-tl-w-etched.step / cph6341-tl-w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cph6341-tl-w.step / cph6341-tl-w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 55e66386060b64ce, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF